Department of Semiconductors Institute of Physics
Academy of Sciences of the Czech Republic

Technological group

Journal papers

 

Surface processes during growth of InAs/GaAs quantum dot structures monitored by reflectance anisotropy spectroscopy
A. Hospodková, J. Vyskočil, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová
Surf. Sci (2010), in press, doi:10.1016/j.susc.2009.11.023 .

InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
A. Hospodková, E. Hulicius, J. Pangrác, J. Oswald, J. Vyskočil, K. Kuldová, T. Šimeček, P. Hazdra and O. Caha
J. Cryst. Growth (2010), in press, doi:10.1016/j.jcrysgro.2009.10.057 .

Vapor Pressure of Trimethylantimony and Tert-butyldimethylantimony
Fulem, M.; Morávek, P.; Pangrác, J.; Hulicius, E.; Šimeček, T.; Růžička, K.; Růžička, V.; Kozyrkin, B; Shatunov, V.
J. Chem. Eng. Data 2009, DOI: 10.1021/je900372v .

Ultrafast photoluminescence spectroscopy of InAs/GaAs quantum dots
K. Neudert, F. Trojánek, K. Kuldová, J. Oswald, A. Hospodková, P. Malý
Phys Status Solidi C 6, 853-856 (2009). doi: 10.1002/pssc.200880597 .

Influence of capping layer thickness on electronic states in self assembled MOVPE grown InAs quantum dots in GaAs
P. Hazdra, J. Oswald, V. Komarnitskyy, K. Kuldová, A. Hospodková, E. Hulicius, J. Pangrác
SUPERLATTICES AND MICROSTRUCTURES 46, 324-327 (2009).

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE
J. Vaniš, J. Zelinka, V. Malina, M. Henini, J. Pangrác, K. Melichar, E. Hulicius, F. Šroubek, J. Walachová
Microelectron. J. 40 , 496 - 498 (2009).

Heat capacities of tetracene and pentacene
M. Fulem, V. Laštovka, M. Straka, K. Růžička, J.M. Shaw
J. Chem Eng Data 53, 2175 (2008), DOI: 10.1021/je800382b.

Influence of capping layer on the properties of MOVPE grown InAs/GaAs quantum dots
A. Hospodková, J. Pangrác, J. Oswald, E. Hulicius, K. Kuldová, J. Vyskočil, K. Melichar, and T. Šimeček
J. Cryst. Growth 310, 5081 (2008), doi:10.1016/j.jcrysgro.2008.07.011 .

Vapor pressure of germanium precursors
J. Pangrác, M. Fulem, E. Hulicius, K. Melichar, T. Šimeček, K. Růžička, P. Morávek, V. Růžička, and S.A. Rushworth
J. Cryst. Growth 310, 4720 (2008), doi:10.1016/j.jcrysgro.2008.06.063 .

A similarity variable for estimating the heat capacity of solid organic compounds Part II. Application: Heat capacity calculation for ill-defined organic solids
V. Laštovka, M. Fulem, M. Becerra, and J.M. Shaw
Fluid Phase Equilibria 268, 134 - 141 (2008), doi:10.1016/j.fluid.2008.03.018 .

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots
P. Hazdra, J. Voves, J. Oswald, K. Kuldová, A. Hospodková, E. Hulicius and J. Pangrác
Microelectron. J. 39, 1070 (2008).

Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
E. Hulicius, J. Oswald, J. Pangrác, J. Vyskočil, A. Hospodková, K. Kuldová, K. Melichar, T.Šimeček
J. Cryst. Growth 310, 2229 - 2233 (2008).

Phase behaviour of Maya crude oil based on calorimetry and rheometry
M. Fulem, M. Becerr, M.D.A Hasan, B. Zhao B, J.M. Shaw
FLUID PHASE EQUILIBRIA 272, 32-41 (2008), DOI: 10.1016/j.fluid.2008.06.005.

InAs/GaAs quantum dot structures covered by InGaAs strain reducing layer characterized by photomodulated reflectance
P. Hazdra, J. Oswald, M. Atef, K. Kuldová, A. Hospodková, E. Hulicius and J. Pangrác
Mater. Sci. Eng. B 147, 175 - 178 (2008).

Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs/AlGaAs heterostructure
J. Walachová, J. Zelinka, V. Malina, J. Vaniš, F. Šroubek,  J. Pangrác, K. Melichar, and E. Hulicius
Appl. Phys. Lett  92, 012101 ( 2008).

Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy / spectroscopy
J. Walachová, J. Zelinka, V. Malina, J. Vaniš, F. Šroubek, J. Pangrác, K. Melichar, and E. Hulicius,
Appl. Phys. Lett. 91, 042110 (2007).

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
A. Hospodková, V. Křápek, T. Mates, K. Kuldová, J. Pangrác, E. Hulicius, J. Oswald, K. Melichar, J. Humlíček, T. Šimeček,
J. Cryst. Growth 298, 570 (2007).

Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, T. Mates, K. Kuldová, K. Melichar, T. Šimeček,
J. Cryst. Growth 298, 582 (2007).

Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
A. Hospodková, V. Křápek, K. Kuldová; J. Humlíček, E. Hulicius, J. Oswald, J. Pangrác, J. Zeman,
Physica E 36, 106-113 (2007).

1.3 µm emission from InAs/GaAs quantum dots
K. Kuldová, V. Křápek, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, E. Hulicius, M. Potemski, J. Humlíček,
physica status solidi (c) 3, 3811-3814 (2006).

Ultrathin InAs and Modulated InGaAs Layers in GaAs Grown by MOVPE Studied by Photomodulated Reflectance Spectroscopy
P. Hazdra, J. Voves, E. Hulicius, J. Pangrác, and Z. Šourek
Appl. Surf. Sci. 253, 85-89 (2006).

Elongation of InAs/GaAs quantum dots from magnetophotoluminescence measurements
V. Křápek, K. Kuldová, J. Oswald, A. Hospodková, E. Hulicius, J. Humlíček,
Appl. Phys. Lett. 89, 153108 (2006).

Photoluminescence and magnetophotoluminescence of circular and elliptical InAs/GaAs quantum dots
K. Kuldová, V. Křápek, A. Hospodková, O.B. Zrzavecká, J. Oswald, E. Hulicius, J. Humlíček
MATERIALS SCIENCE & ENGINEERING C - BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS 26 (5-7) 983-986, Sp. Iss. SI, (2006).

Vapour pressure measurement of metal organic precursors used for MOVPE
M. Fulem, K. Růžička, V. Růžička, T. Šimeček, E. Hulicius, and J. Pangrác
J.Chem.Thermodynamics 38, 312 - 322 (2006).

Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy
K. D. Moiseev, E. V. Ivanov, G. G. Zegrya, M. P. Mikhailova, Yu. P. Yakovlev, E. Hulicius,A. Hospodková, J. Pangrác, K. Melichar, and T. Šimecek
Appl. Phys. Lett. 88, 132102 (2006).

Transport-controlling deep defects in MOVPE grown GaSb
D. Kindl, P. Hubík, J.Krištofik, J.J. Mareš, E. Hulicius, J. Pangrác, K. Melichar, Z. Výborný, and J. Toušková
Semicond. Sci. Technol. 21 (2), 180-183 (2006).

New static apparatus and vapor pressure of reference materials: Naphthalene, benzoic acid, benzophenone, and ferrocene
M.J.S. Monte, L.M.N.B.F. Santos, M. Fulem, J.M.S. Fonseca, C.A.D. Sousa
J. Chem. Eng. Data 51 (2), 757-766 (2006).

Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode
Dubecky F., Hulicius E., Frigeri P., Perd'ochova-Sagatova A., Zat'ko B., Hubik P., Gombia E., Bohacek P., Pangrac J., Franchi S., Necas V.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT 563 (1), 159-162 (2006).

Optical characterization of MOVPE grown d-InAs layers in GaAs
P. Hazdra, J. Voves, E. Hulicius and J. Pangrác
phys. stat. sol. (c) 2, 1319-1324 (2005) .

Noise spectroscopy measurement of 2.3 µm CW GaSb based laser diodes
Chobola Z., Juránková V., Vaněk J., Hulicius E., Šimeček T., Alibert C. Rouillard Y., Werner. R
Elektronika 1 (2005), pp.70-73, Poland ISSN 0033-2089.

Vapour pressure of di-tert-butylsilane
M. Fulem, K. Růžička, V. Růžička, T. Šimeček, E. Hulicius J. Pangrác, J. Becker, J. Koch, A. Salzmann
J. Chem. Eng. Data 50, 1613 - 1615 (2005).

GaSb based lasers operating near 2.3 µm for high resolution absorption spectroscopy
S. Civiš, V. Horká, T. Šimeček, E. Hulicius, J. Pangrác, J. Oswald, O. Petříček, Y. Rouillard, C. Alibert, and R. Werner
Spectrochim. Acta A 61, 3066-3069 (2005).

Electroluminescence of type II broken gap P-Ga0.84In0.16As0.22Sb0.78/p-InAs heterostructures with high mobility electron channel at the interface
J. Oswald, J. Pangrác, E. Hulicius, T. Šimeček, K. D. Moiseev, M.P. Mikhailova, and Yu.P. Yakovlev
J. Appl. Phys. 98  (08)  083512  (2005).

Room temperature diode laser photoaccoustic spectroscopy near 2.3 µm
S. Civiš , V. Horká, J. Cihelka, T. Šimeček, E. Hulicius, J. Oswald, J. Pangrác, A. Vicet, Y. Rouillard, A. Salhi, C. Alibert, R. Werner and J. Koeth
Appl. Phys. B 81, 857 - 861 (2005).

Recommended vapor pressure of solid naphtalene
K. Růžička, M. Fulem, V. Růžička
J. Chem. Eng. Data 50 (6), 1956 - 1970 (2005).

Heat capacities of alkanols - III. Some 1-alkanols from C-10 to C-20
Ruzicka K, Fulem M, Ruzicka V, Zabransky M
Thermochimica Acta 421 (1-2): 35-41 (2004).

Vapour pressure and heat capacities of metal organic precursors Y(thd)3 and Zr(thd)4
M. Fulem, K. Růžička, V. Růžuička, T. Šimeček, E. Hulicius, J. Pangrác
J. Cryst. Growth 264 (1-3), 192-200 (2004).

Influence of growth rate on charge transport in GaSb homojunctions prepared by MOVPE
Kindl D., Toušková J., Hulicius E., Pangrác J., Šimecek T., Výborný Z., Hubík P., Mareš J. J., Krištofik J.
J. Appl. Phys. 95 (4), 1811-1815 (2004).

Influence of photon recycling on photovoltage spectra of GaSb diodes
Toušek J., Toušková J., Hulicius E., Šimecek T., Pangrác J., Melichar K., Výborný Z., Jurka V.
J. Appl. Phys. 95 (9), 5104-5110 (2004).

Measurement of vapour pressure of In-based metalorganics for MOVPE
Fulem M, Ruzicka K, Ruzicka V, Hulicius E, Simecek T, Pangrac J, Rushworth SA, Smith LM
J. Cryst. Growth 272 (1-4) 42-46 (2004).

Vapor pressure of metal organic precursors
M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, K. Melichar, J. Pangrác, S. A. Rushworth and L. M. Smith
Journal of Crystal Growth, 248, 99-107 (2003).

InAs d-layer structures in GaAs grown by MOVPE and characterised by luminescence and photocurrent spectroscopy
P. Hazdra, J. Voves, J. Oswald, E. Hulicius, J. Pangrác and T. Šimeček
Journal of Crystal Growth, 248, 328-332 (2003).

Charge transport study and spectral response of GaSb/GaAs heterojunctions prepared by MOVPE
J. Toušková, D. Kindl, E. Samochin, J. Toušek, E. Hulicius, J. Pangrác, T. Šimeček, and Z. Výborný
Solar Energy Materials and Solar Cells, 76, 135 - 145 (2003).

Electroluminescence in a Semimetal Channel at a Single Broken-Gap Heterointerface of Type II
K. D. Moiseev, M. P. Mikhailova, Yu. P. Yakovlev, J. Oswald, E. Hulicius, J. Pangrác, and T.Šimeček
Semiconductors, 37 (2003) 1185 - 1189.
Translated from Fizika i Tekhnika Poluprovodnikov, 37, No. 10, 2003, pp. 1214-1219.

Current-voltage characteristics of GaSb homojunctions prepared by MOVPE
J. Touskova, D. Kindl, B. Blahitka, J. Tousek, E. Hulicius, J. Pangrac, E. Samochin, T. Simecek, Z. Vyborny
SOLID-STATE ELECTRONICS, 47 (9), 1471-1478 (2003).

Characterization of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode,
J. Vaniš, D.H. Chow, J. Pangrác, F. Šroubek, T.C. McGill, and J. Walachová,
phys. stat. sol. (c) 0, No. 3, 986–991 (2003).

Oswald J, Hulicius E, Pangrac J, Melichar K, Simecek T, Petricek O, Kuldova K, Hazdra P, Voves J,
Lasers with delta InAs layers in GaAs, 
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 88 No.2-3 (2002) 312-316.

Kuldova K, Oswald J, Zeman J, Hulicius E, Pangrac J, Melichar K, Simecek T,
Magneto-photoluminescence study of electronic transitions in InAs/GaAs quantum dot layers,
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY 88 No.2-3 (2002) 247-251.

Vorlicek V, Moiseev KD, Mikhailova MP, Yakovlev YP, Hulicius E, Simecek T
Raman scattering study of type II GaInAsSb/InAs heterostructures
CRYSTAL RESEARCH AND TECHNOLOGY 37 (2-3) 259-267 (2002).

Touskova J, Samochin E, Tousek J, Oswald J, Hulicius E, Pangrac J, Melichar K, Simecek T
Photovoltage spectroscopy of InAs/GaAs quantum dot structures
JOURNAL OF APPLIED PHYSICS 91 (12) 10103-10106 (2002). 

Photoluminescence of Ga0.94In0.06As0.13Sb0.87 solid solution lattice matched to InAs
Moiseev KD, Mikhailova MP, Yakovlev YP, Simecek T, Hulicius E, Oswald J
OPTICAL MATERIALS 19 (04)  0455 - 0459 (2002).

Polarization anisotropy of photoluminescence from multilayer InAs/GaAs quantum dots
Humlíček J, Munzar D, Navrátil K, Lorenc M, Oswald J, Pangrác J, Hulicius E.
PHYSICA E 13, (2-4) 229 - 232 (2002 ).

A.Wilk, F.Genty, B.Fraisse, G.Boissier, P.Grech, M.El Gazouli, A.Joullié, P.Christol, J.Oswald, T.Simecek, E.Hulicius,
MBE growth of InAs/InAsSb/AlAsSb structures for mid – infrared lasers,
J. Cryst. Growth 223 (2001) 341-348.

K.D.Moiseev, M.P.Mikhailova, Yu.P.Yakovlev, T.Šimeček, E.Hulicius, J.Oswald,
Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs,
J. Appl. Phys. 90 No 5 (2001) 2813-2817. 

J.Kosikova, J.Leitner, J.Pangrac, K.Melichar, K.Jurek, I.Drbohlav, J.Stejskal,
Ga1-xInxSb - MOVPE growth and thermodynamic model,
Semicond. Sci. Technol. 16 (2001) 759 - 762.

Kizhaev SS, Molchanov SS, Zotova NV, Grebenshchikova EA, Yakovlev YP, Hulicius E, Simecek T, Melichar K, Pangrac J,
Broken-gap heterojunction in the p-GaSb-n-InAs1-xSbx (0 <= x <= 0.18) system,
TECHNICAL PHYSICS LETTERS 27 No.11 (2001) 964-966.

J.Oswald, K.Kuldová, J.Zeman, E.Hulicius, S.Jullian, and M.Potemski,
Magneto-photoluminescence study of energy levels of self- organised InAs/GaAs quantum dots,
Mat. Sci. and Eng. B69-70 (2000) 318-323.

A.Joulie, E.M.Scoury, M.Gaarcia, P.Grech, A.Wilk, P.Christol, and A.N.Baranov; A.Behres, J.Kluth, A.Stein, and K.Heime; M.Heuken; S.Rushworth; T.Šimeček, E.Hulicius,
InAs(PSb) based "W" Quant. Well Laser Diodes Emitting Near 3.3. µm,
Appl. Phys.Lett. 76, N°18 (2000) 2499-2501.

J.Pangrác, J.Oswald, E.Hulicius, K.Melichar, V.Vorlíček, I.Drbohlav, T.Šimeček,
InAs/GaAs Multiple quantum dot structures grown by LP-MOVPE,
Thin. Sol. Films 380, Nos.1-2 (2000) 101 - 104.

J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, T. Šimeček, O. Petříček, M. Vančura, J. Hradil,
InAs/GaAs Lasers with very thin active layer,
Thin. Sol. Films 380, Nos.1-2 (2000) 233 - 236.

P.Hubik, J.Kristofik, J.J.Mares, J.Maly, E.Hulicius, J.Pangrac,
Deep levels in GaAs due to Si delta doping,
J.Appl.Phys., 88 (11) (2000) 6488.

A.Hospodková, E.Hulicius, J.Oswald, J.Pangrác, K.Melichar and T.Šimeček,
Strained InGaAs/GaAs Multiple Quantum Wells Grown by MOVPE,
Czech. J. Phys. 49 (1999) 805-811.

K.D.Moiseev, M.P.Mikhailova, N.D.Stoyanov, Yu.P.Yakovlev, E.Hulicius, T.Simecek, J.Oswald, J.Pangrác,
Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures,
J. Appl. Phys. 86 (1999) 6264-6268.

J.J.Mareš, J.Krištofik, P.Hubík, E.Hulicius, K.Melichar, J.Pangrác, J.Novák, S.Hasenohrl,
Out-of-Plane Weak Localisation in Two-Dimensional Electron Structures,
Phys. Rew. Lett. 80, 18 (1998) 4020-4023.

J.Rosa, J.Pangrac, M.Vanecek, V.Vorlicek, M.Nesladek, K.Meykens, C.Quaeyhaegens, L.M.Stals,
Simultaneous chracterization of defect states in CVD diamond by PDS, EPR, raman and photocurrent spectroscopies,
Diamond and Related Materials 7 (1998) 1048.

J.Oswald, E.Hulicius, V.Vorlíček, J.Pangrác, K.Melichar, T.Šimeček,
Study of InAs Quantum Dots in GaAs Prepared on misoriented substrates,
Thin. Solid Films 336 (1998) 80.

P.Malý, F.Trojánek, J.Kudrna, A.Hospodková, S.Banáš, V.Kohlová, J.Valenta, I. Pelant,
Picosecond and milisecond dynamics of photoexcited carriers in porous silicon,
Physical Review B, 54, No.11, (1996) 7929 - 7936.

R. Tomasiunas, I. Pelant, A. Hospodková, V. Kohlová, P. Knápek, R. Lévy, J. Moniatte, J. B. Grun and B. Hönerlage,
Transient laser-induced grating spectroscopy in porous silicon,
Thin Solid Films 276 , No. 1-2 (1996) 55-57.

P. Malý, J. Kudrna, F. Trojánek and A. Hospodková,
Optical non-linearity and hysteresis in porous silicon,
Thin Solid Films 276 , No. 1-2 (1996) 84-87.

F.Trojánek, P.Malý, I. Pelant, A.Hospodková, V.Kohlová, J.Valenta,
Picosecond dynamics of photoexcited carriers in free standing porous silicon,
Thin solid films 255 (1995) 77-79.

E. Hulicius, J. Oswald, J. Pangrác, T. Šimeček, N. S. Bresler, V. N. Cheban, O. B. Gusev, A. N. Titkov,
Origin of recombination transitions at the lattice-matched GaInAsSb-GaSb n-N type-II heterojunctions,
J. Appl. Phys. 75 (1994) p.4189-4193.

Oswald J., Pastrnak J., Hospodkova A., Pangrac J.
Temperature behavior of luminescence of free standing porous silicon
SOLID STATE COMMUNICATIONS 89 (3) 297 - 300 JAN 1994.

P.Hlinomaz, O.Klíma,A.Hospodková, E.Hulicius, J.Oswald, E.Šípek, and J.Kočka,
Photoelectric properties of self supporting porous silicon,
Appl. Phys. Lett. Vol. 64, No. 23 (1994) 3118-3120.

P.Malý, F.Trojánek, A.Hospodková, V.Kohlová, I.Pelant,
Transmission study of picosecond photocarrier dynamics in free-standing porous silicon,
Solid State Comunication, vol.89, no.8 (1994), p.709-712.

O.Klíma, P.Hlinomaz, A.Hospodková, J.Oswald, and J.Kočka,
Transport properties of self-supporting porous silicon,
JOURNAL OF NON-CRYSTALLINE SOLIDS 166, Part 2 (1993) 961-964.

On the transport mechanism in porous silicin
Mares JJ, Kristofik J, Pangrac J, Hospodkova A
APPLIED PHYSICS LETTERS 63 (1993) 180-182.

A.Abrahám, E.Hulicius.T.N.Danilova, B.E.Dzurtanov, A.N.Imenkov, Y.P.Yakovlev,
Stabilizacia izlucenija pri narabotke zaroscenovo InGaAsSb-GaSb geterolasera (l =2mm),
Pisma v ZhTF, 17 (1991) 56-60.

 

List of contributions at conferences

M. S. Bresler, O. V. Gusev, A. N. Titkov, Yu. P. Yakovlev, E. Hulicius, J. Oswald, J. Pangrác, T. Šimeček,
Interface Radiation Recombination in Type II n GaInAsSb/N GaSb Heterojunctions,
MRS Fall Meeting, Boston 1993, M8.27 .

T.Šimeček, E.Hulicius,
Optical Properties of GaInAsSb/GaSb Heterojunctions of the II- Type
Proc. of Workshop "Heterostructure Epitaxy and Devices, Smolenice 1993, p. 202 .

E.Hulicius, J.Oswald, J.Pangrác, T.Šimeček, N.S.Bresler, V.N.Cheban, O.B.Gusev, A.N.Titkov,
The Origin of Recombination Transitions at the Lattice Matched GaInAsSb n-N Heterojunctions of the II Type,
Proc of the 13th GC CMD EPS, Regensburg 1993, p. 1483 .

E. Hulicius, T. Šimeček, A. Hospodková, J. Oswald, C. Alibert, A. N. Baranov, Yu. P. Yakovlev, A. M. Litvak, P. Werle, R. Mücke,
Heterostructure lasers based on GaSb and InAs for spectroscopy,
NATO Advanced Research Workshop HEAD'95, 2nd International workshop on Heterostructure Epitaxy and Devices, Smolenice (1995) Proc. p.289-292.

E.Hulicius, T.Šimeček, C.Alibert, A.N.Barranov, Yu.P.Yakovlev, J.Oswald, F. Karel, P.Volejníček,
Lasers and laser heterostructures based on GaSb and InAs for light emission in the range 2-4m m,
Proc. of International Conference on Mid-infrared Optoelectronic Materials & Devices, Lancaster 1996 p. 59.

E.Hulicius, T.Šimeček, H.Reichardt, R.Stepniewski, W.Richter, K.Melichar, J.Pangrac, T.Hos, J.Oswald, Z.Šourek, V.Vorliček,
Comparision between bubbler and direct vaporisation MOVPE grown layers of GaAs and GaAlAs,
Proc. of The 7th European Workshop MOVPE Berlin 1997 p. D1.

E.Hulicius, K.Jurek, J.Oswald a J.Pangrác,
Fotoluminiscence kvantověrozměrových objektů z polovodičů AIIIBV,
invited in : Optické vlastnosti pevných látek v základním výzkumu a aplikacích, Brno 1997 p. 34-42.

E.Hulicius, J.Oswald, J.Pangrác, K.Melichar, T.Šimeček, V.Vorliček, K.Král, D.Nohavica,
Technology and Luminescent Properties of InAs/GaAs Quantum Dots,
NATO Advanced Research Workshop HEAD '97, “Proc. of the 3rd international workshop on Heterostructure Epitaxy and Devices”, Smolenice 1997.

E.Hulicius, T.Šimeček, H.Reichardt, R.Stepniewski, W.Richter, K.Melichar, J.Pangrác, T.Hos, J.Oswald, Z.Šourek, V.Vorlíček,
Comparision between bubbler and direct vaporisation MOVPE grown layers of GaAs and GaAlAs,
Proc. of the 7th European Workshop MOVPE Berlin 1997 p. D1.

E.Hulicius, J.Oswald, J.Pangrác, K.Melichar, T.Šimeček, V.Vorlíček, K.Král, D.Nohavica,
Technology and Luminescent Properties of InAs/GaAs Quantum Dots,
NATO Advanced Research Workshop HEAD '97, “Proc. of the 3rd international workshop on Heterostructure Epitaxy and Devices”, Smolenice 1997, p. 207-210.

P. Christol, A. Behres, J. Kluth M. Garcia, P. Grech, M. Skouri, A. Stein, K. Heime, E. Hulicius, T. Simecek, A. Wilk and A.Joullié,
Mid-Infrared electroluminescence in Al-free type-II "W" quantum-well structure,
3rd International Conference Mid-infrared Optoelectronics Materials and Devices (MIOMD III), Aachen, Germany, September 5-7 1999.

E. Hulicius, J. Oswald, A. Hospodková, J. Pangrác, K. Melichar, and T. Šimeček,
Preparation and characterisation of AIIIBV semiconductor quantum-size structures by MOCVD technology,
Proc. of The Second Chinese-Czech Symposium Advanced Materials and Devices for Optoelectronics, 13-14 September 1999, Beijing, China, p 16-23.

E.Hulicius, J.Pangrác, J.Oswald, K.Melichar, V.Vorlíček, I.Drbohlav, T.Šimeček,
InAs/GaAs Multiple quantum dot structures grown by LP-MOVPE,
pres. at Int. Conf. E-MRS Spring meeting, Strasbourg 2000.

J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, T. Šimeček, O. Petříček, M. Vančura, J. Hradil,
InAs/GaAs Lasers with very thin active layer,
pres. at Int. Conf. E-MRS Spring meeting, Strasbourg 2000.

E. Hulicius, P. Hazdra, J. Voves, J. Oswald, J. Pangrác, K. Melichar, M. Vančura, T. Šimeček,
Quantum size InAs/GaAs Lasers - Preparation and Properties,
Accepted for Int. Conf. ASDAM, Slovakia, October 2000.

T.Šimecek, E.Hulicius, J.Oswald, J.Pangrác, P.Čapek, K.Heime, A.Behres, A.Joullie, P.Christol,
Mid-Infrared Semiconductor Lasers,
Accepted for Int. Conf. ASDAM, Slovakia, October 2000.

J. Kosíková, J. Pangrác, K. Melichar, J. Oswald, J. Stejskal, J. Leitner, T. Šimeček, E. Hulicius,
MOVPE grown GaSb based ternary layers from different precursors
Proc. of the 3rd International Conference Mid-infrared Optoelectronics – Materials and Devices (MIOMD III): Aachen, P2, 1999.

V. Vorlíček, E. Hulicius, J. Pangrác, K. Melichar, T. Šimeček,
InAs/GaSb structures on GaAs: A Raman scattering study,
Proc. of EW MOVPE VIII, Prague 1999, p 381-384.

A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, K. Melichar, and T. Šimeček
Strained InxGa1-xAs/GaAs Multiple Quantum Wells Grown by MOVPE,
Proc. of EW MOVPE VIII, Prague 1999, p 425-428.

J. Oswald, E. Hulicius, J. Pangrác, K. Melichar, T. Šimeček, O. Petříček and F. Karel
Preparation and Properties of InAs/GaAs Lasers,
Proc. of EW MOVPE VIII, Prague 1999, p 277-280.

M. Lorenc, J. Šik, A. Nebojsa, K. Navrátil, J. Humlíček, V. Vorlíček, E. Hulicius,
Optical characterisation of a thick MOVPE InSb film on GaAs,
Proc. of EW MOVPE VIII, Prague 1999, p369-372.

K. D. Moiseev, M. P. Mikhailova, N. D. Stoyanov, Yu. P. Yakovlev, E. Hulicius, T. Simecek, J. Oswald, J. Pangrác,
Electrical and luminescent properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures,
3rd International Conference Mid-infrared Optoelectronics Materials and Devices (MIOMD III), Aachen, Germany, September 5-7 1999.

J. Oswald, K. Kuldová, J. Zeman, E. Hulicius, S. Jullian, and M. Potemski,
Magneto-photoluminescence study of energy levels of self- organised InAs/GaAs quantum dots,
pres. at Int. Conf. E-MRS Spring meeting, Strasbourg 1999.

A. Stein, A. Behres, K. Heime, A. Wilk, P. Christol, A. Joulie, M. Brožíček, E. Hulicius, T. Šimeček, S. Rushworth, L. Smith, M. Ravetz,
InAs(PSb)/InAsSb LEDs emitting in the 3-4 µm range at room temperature,
Proceedings of the 11th International Conference on Indium Phosphide and Related Materials, 16-20 May 1999, Davos, Switzerland..

J. Toušková, D. Kindl, E. Samochin, J. Toušek, E. Hulicius, J. Pangrác, K. Melichar, T. Šimeeek, and Z. Výborný,
Current - Voltage characteristics of GaSb homojunctions prepared by MOVPE,
presented at 5th International Conference Mid-infrared Optoelectronics Materials and Devices (MIOMD IV), Annapolis, USA, September 7-11th, 2002.

M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, K. Melichar J. Pangrác, S.A. Rushworth, and L.M. Smith
Vapour pressure of metalorganic precursors,
Annual Meeting of the Physics Society of Taiwan at the National Tung Hwa University. February 12th-14th, 2003.

M. Fulem, K. Růžička, V. Růžička, E. Hulicius, T. Šimeček, K. Melichar J. Pangrác,
Vapour pressure of organometalic precursors, Ythd3 and Zrthd4,
EW MOVPE X, Lecce, June 8-11th 2003, Proc. p. 125-128.

A. Mačkal, P. Hazdra, J. Voves, E. Hulicius, J. Oswald, J. Pangrác, K. Melichar, A. Hospodková, and T. Šimeček,
Lasers with Thin Strained InAs Layers in GaAs - Electro-optical Characterisation and Operation at Elevated Temperatures,
EW MOVPE X, Lecce, June 8-11th 2003, Proc. p. 227-230.

A. Hospodková, K. Kuldová, J. Oswald, E. Hulicius, J. Pangrác, T. Šimeček and I. Vávra,
MOVPE prepared self-organised InAs/GaAs mono and multilayer quantum dot structures: Magneto-photoluminescence study of electronic transitions,
EW MOVPE X, Lecce, June 8-11th 2003, Proc. p. 55-58.

K.D. Moiseev, A.P. Astakhova, G.G. Zegrya, M.P. Mikhailova, Yu.P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, and T. Šimecek
Electroluminescent properties of quantum well AlSb/InAsSb heterostructures grown by MOVPE
NANOSTRUCTURES: Physics and technology – 12th International Symposium, St. Petersburg, Russia, June 21 - 25, 2004, Proceedings p. 58.

K.D. Moiseev, A.P. Astakhova, E.V. Ivanov, G.G. Zegrya, M.P. Mikhailova, Yu.P. Yakovlev, E. Hulicius, A. Hospodková, J. Pangrác, and T. Šimecek
Quantum well AlSb/InAsSb laser heterostructures grown by MOVPE
MIOMD VI – 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices, St. Petersburg, Russia, June 28 - July 2, 2004, Proceedings p. 45.

E. Hulicius, T. Šimecek, J. Oswald, J. Pangrác, C. Alibert, Y. Rouillard, R. Werner, Z. Chobola, and S. Civiš
Preliminary results on 2.3 mm CW GaSb based lasers for H.R. spectroscopy
MIOMD VI – 6th International Conference on Mid-Infrared Optoelectronics Materials and Devices, St. Petersburg, Russia, June 28 - July 2, 2004. Proceedings p. 107.

E. Hulicius, T. Šimecek, J. Oswald, J. Pangrác, R. Werner, C. Alibert, Y. Rouillard, S. Civiš, and Z. Chobola
Tunable midinfrared semiconductor lasers for laser spectroscopy
20th General Conference Condensed Matter Division EPS, Prague, July 19-23, 2004. Proceedings p. 254.

A. Hospodková, K. Kuldová, J. Oswald, E. Hulicius, J. Pangrác, and I. Vávra
Overlaping of vertically stacked quantum dot electron wavefunctions
20th General Conference Condensed Matter Division EPS, Prague, July 19-23, 2004. Proceedings p. 28.

Lateral shape of InAs/GaAs quantum dots in vertically correlated structures
A. Hospodková, V. Křápek, T. Mates, K. Kuldová, J. Pangrác, E. Hulicius, J. Oswald, K. Melichar, J. Humlíček, and T. Šimeček
IC MOVPE XIII - 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22nd - 26th, 2006. Proceedings p. 499-500.

Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs
A. Hospodková, E. Hulicius, J. Oswald, J. Pangrác, T. Mates, K. Kuldová, K. Melichar, T. Šimeček
IC MOVPE XIII - 13th International Conference on Metal Organic Vapor Phase Epitaxy, Miyazaki, Japan, May 22nd - 26th, 2006. Proceedings p. 227-228..

Properties of InAs/GaAs Quantum Dots in Vertically Correlated Structures with 2 QD Layers Grown by MOVPE
J. Vyskočil, A. Hospodková, J. Pangrác, J. Oswald, T. Mates, K. Melichar, T. Šimeček, E. Hulicius
XXXV International School on Physics of Semiconducting Compounds. Jasowiec, Ustron - Jasowiec, Poland, June 17-23, 2006.

Vlastnosti InAs/GaAs kvantových teček ve vertikálně korelovaných strukturách s dvěma vrstvami kvantových teček získaných pomocí MOVPE
J. Vyskočil, A. Hospodková, J. Pangrác, J. Oswald, T. Mates, K. Melichar, T. Šimeček, E. Hulicius
Optické vlastnosti pevných látek v základním výzkumu a aplikacích, Brno, červen 26.-28., 2006.

Influence of MOVPE Technological parameters on InAs/GaAs quantum dots properties
E. Hulicius, A. Hospodková, J. Oswald, J. Pangrác, K. Kuldová, T. Mates, K. Melichar, T. Šimeček
33rd International Symposium on Coumpound Semiconductors, The University of British Columbia, Vancouver, Canada, August 13 - 17, 2006. Proceedings p. 172..

Room temperature electroluminescence of AlSb/InAsSb quantum wells grown by MOVPE
E. Hulicius, J. Pangrác, A. Hospodková, K. Melichar, T. Šimeček, K.D. Moiseev, E.V. Ivanov, G.G.Zegrya, M.P. Mikhailova, Yu.P. Yakovlev
33rd International Symposium on Coumpound Semiconductors, The University of British Columbia, Vancouver, Canada, August 13 - 17, 2006. Proceedings p. 176.

Analysis of Polycrystalline silicon thin films with different grain sizes
S. Honda, J. Oswald, K. Knížek, K. Melichar, T. Mates, M. Ledinský, A. Fejfar, J. Kočka
21st European Photovoltaic Solar Energy Conference and Exhibition, Dresden, September 4-8, 2006.

 

 

Popularisation of Science / Popularizace vědy

E.Hulicius, Diamanty v elektronice, Čs. čas. fyz. A26 (1976) 414 - 415.

J.Valenta, I.Pelant, E.Hulicius, J.Pangrác, S.Banáš, Kvantová houba?, Vesmír 5 (1994) 282 - 285.

ČT2-Teleskop -95, E.Hulicius - odborný poradce, E.Hulicius, A.Hospodková, R.Sedlacík: Kvantová houba a MOVPE, 15min, (1995).

E.Hulicius, O Fyzice a Magii, Porgazeen 2 (10) (1996) 16.

A.Hospodková, E.Hulicius, J.Pangrác, Epitaxní technologie z organokovových sloučenin, Cs. cas. fyz. A48 (2) (1998) 133-138.

E.Hulicius, Proč studovat matematiku, Porgazeen 5 (14) (1999).

E. Hulicius, V. Jahnová, Polovodičové heterostruktury - Nobelova cena za fyziku v roce 2000, Ozvěny vědy, rozhlas - stanice Vltava, 10. 11. 2000, 9:30, 12min.

E. Hulicius, I. Budil, Nobelova cena fyzice, stanice Praha, Meteor, 2. 12. 2000, 8:05, 7min, zkráceně na: http://www.rozhlas.cz/veda/?main=vt001201a.htm .

E. Hulicius, B. Velický, Heterostruktury, které slouží všem, Vesmír, 80, leden 2001, 32-34, také na: http://www.vesmir.cz/ .

E. Hulicius, M. Závětová, Rozhovor s prof. Alferovem, Cs. cas. fyz. A51 (2001), .

E. Hulicius, T. Šimeček, Nobelova cena za fyziku, Pokroky mat. a fyz. (2001), .

 

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