RESEARCH

of the MOVPE laboratory, Department of Semiconductors, Institute of Physics
Academy of Sciences of the Czech Republic, Prague 

EQUIPMENT

TOPICS

PROJECTS

Links:

EQUIPMENT

The MOVPE growth system is AIXTRON 200 with RF heating and horizontal reactor, N2 glove box and Pd diffused H2 as a transport gas.

Source materials:
TMGa, TEGa, TMAl, TtBAl, TMIn, TDMASb, TESb, AsH3, tBAsH2
Doping materials:
DETe, SiH4, CCl4, DEZn
Supporting equipment:
  • HV - UHV evaporation station (Perkin Elmer) with annealing and alloying facilities
  • Ultrasound wire bounder
  • He leak detector
  • Orbital welder
  • Mass spectroscopy
  • Substrate orientation and cutting facilities
  • In house diagnostic techniques in co-operating groups:

    TOPICS

    • GaAs/AlGaAs - planar waveguides, Quantum Wells (QW), Multi QW (MQW), delta doping with Si
    • GaAs/InGaAs - QW,  MQW, Quantum Dots (QD), QW and QD based lasers
    • GaAs/InAlAs - QW,MQW
    • GaSb, GaAsSb, InAsSb, InGaSb - layers and structures
    e-mail address: movpe@fzu.cz