Tuesday 7 November 2006 at 15:00

Jan Mašek
(Department of Condensed Matter Theory, Institute of Physics ASCR, Prague)

Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors

Abstract:
A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as GaP or (Al,Ga)As which opens a wide area of possibilities for optimizing the host composition towards higher Curie temperatures. Here we explore theoretically Mn incorporation and ferromagnetism in (Al,Ga)As and Ga(As,P) ternary hosts. While alloying (Ga,Mn)As with Al has only a small effect on Curie temperature we predict a sizable enhancement of Curie temperatures in the smaller lattice constant Ga(As,P) hosts. Our microscopic calculations also suggest a marked increase of the solubility of substitutional Mn upon alloying GaAs with P.
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* in collaboration with
J. Kudrnovsky, F. Maca, Jairo Sinova, A.H. MacDonald, T. Jungwirth


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