Tuesday 7 November 2006 at 15:00
Jan Mašek
(Department of Condensed Matter Theory, Institute of Physics ASCR, Prague)
Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors
Abstract:
A remarkable progress towards functional ferromagnetic semiconductor
materials for spintronics has been achieved in p-type (Ga,Mn)As.
Robust hole-mediated ferromagnetism has, however, been observed
also in other III-V hosts such as GaP or (Al,Ga)As which opens
a wide area of possibilities for optimizing the host composition
towards higher Curie temperatures.
Here we explore theoretically Mn incorporation and ferromagnetism
in (Al,Ga)As and Ga(As,P) ternary hosts. While alloying
(Ga,Mn)As with Al has only a small effect on Curie temperature
we predict a sizable enhancement of Curie temperatures in the smaller
lattice constant Ga(As,P) hosts. Our microscopic calculations also
suggest a marked increase of the solubility of substitutional
Mn upon alloying GaAs with P.
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* in collaboration with
J. Kudrnovsky, F. Maca, Jairo Sinova, A.H. MacDonald, T. Jungwirth
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