Thursday 23 January 2003 16:00
Jan Masek
(Theoretical department Institute of Physics ASCR, Prague)
Lattice constant in diluted magnetic
semiconductors (Ga,Mn)As
Abstract:
We use the density-functional calculations to investigate the
compositional dependence of the lattice constant of (Ga,Mn)As with
various native defects. The lattice constant of perfect mixed
crystals does not depend on the concentration of Mn but
it increases if some Mn atoms occupy interstitial positions.
The same happens if As antisite defects are present.
A quantitative agreement with the observed compositional dependence
is obtained for materials close to a complete compensation due to
these two donors. The increase of the lattice constant of
(Ga,Mn)As is correlated with the degree of the compensation: the
materials with low compensation should have lattice constants
close to the lattice constant of GaAs crystal.