Thursday 10 April 2003 16:00
Zdenek Chvoj
(Department of Thin Films, Institute of Physics ASCR, Prague)
Analysis of prefactors for interlayer
diffusion on Ag/Ag(111)
Abstract:
Interlayer diffusion controls the transfer of atoms between different
layers in a film and is the key factor controlling whether growth is
layer-by-layer growth or 2-dimensional. Recent experiments on
Ag/Ag(111)
have measured similar values for the step edge barrier Es but
different
prefactor ratios vs/vt where vt is the prefactor at a terrace
and vs the
prefactor at a step edge site. Prefactor ratio larger than 1,
vs/vt $>$1,
is extracted at low temperature T$<$150K, but vs/vt $\propto $1 is
extracted at higher temperature, T=300K experiments. We examine as
possible reasons for the discrepancy the dependence of the step edge
barriers on the type of microscopic site (i.e. kink or straight
step sites).
In addition we examine the conditions necessary for steady state to
hold
in island decay experiments, which are used to conclude vs/vt
$\propto $1
and whether such conditions are fulfilled for Ag/Ag(111). Because
of the
very low terrace diffusion barrier on Ag(111) Et $<$ 0.1eV the
steady
state condition does not hold and the island decay is better
described in
terms of independent atom detachment. Re-analysis of the data in
terms of
this model results also in vs/vt $>$1 in good agreement with the low
temperature experiments.