Tuesday 14 December 2004 at 15:00
Anděla Kalvová
(Department of Condensed Matter Theory, Institute of Physics ASCR, Prague)
Disorder induced e-h correlation in photo-transients in semiconductors
Abstract:
In non-crystalline semiconductors, the disorder in the valence and
conduction bands is statistically correlated. This leads on
average to an effective kinematical correlation between the
electron and holes resembling the exciton phenomena, as is well
known for linear optical response. We study this correlation
employing non-equilibrium Green's functions for non-linear
transients induced in semiconductor alloys by short strong
optical pulses. The exciton analogy is incomplete, as the electron
and hole states are mixed by light, but the notion of an effective
final state interaction is valid. Numerical solution employing a
self-consistent single-site approximation is used to analyze the
onset and a ripe stage of disorder-related e-h
coupling and mixing, and their influence on the transient
polarization and energy transfer, whose late stages depend strongly on
the degree and character of the band-band disorder
correlation. Finally, we obtain the linear response limit and
link the correlation vertex with the effective Elliott factor.
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