Thursday 6 May 2004 at 15:00
Jan Mašek
(Department of Condensed Matter Theory, Institute of Physics ASCR, Prague)
Co-doping and compensation in (Ga,Mn)As dilute
magnetic semiconductors
Abstract:
A tight-binding version of the coherent-potential approximation is used
to describe the electronic structure of Ga1-xMnxAs mixed
crystals with variable degree of
co-doping. Both donors and acceptors are considered to control the
number n of free carriers. The mean-field value of the Curie
temperature Tc is estimated from the energy
required to reverse one
local moment. Tc/x is
shown to scale as a function of n/x, with
only a minor influence of the actual chemical composition, and discuss
the character of the exchange coupling in various doping regimes.
We also address the self-compensation in (Ga,Mn)As. We find that the
substitutional and interstitial positions of Mn are in a dynamical
equilibrium and are realized in proportion approx. 3:1 also in a wide
range of concentrations of Mn.
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