Thursday 6 May 2004 at 15:00

Jan Mašek
(Department of Condensed Matter Theory, Institute of Physics ASCR, Prague)

Co-doping and compensation in (Ga,Mn)As dilute magnetic semiconductors

Abstract:
A tight-binding version of the coherent-potential approximation is used to describe the electronic structure of Ga1-xMnxAs mixed crystals with variable degree of co-doping. Both donors and acceptors are considered to control the number n of free carriers. The mean-field value of the Curie temperature Tc is estimated from the energy required to reverse one local moment. Tc/x is shown to scale as a function of n/x, with only a minor influence of the actual chemical composition, and discuss the character of the exchange coupling in various doping regimes.
We also address the self-compensation in (Ga,Mn)As. We find that the substitutional and interstitial positions of Mn are in a dynamical equilibrium and are realized in proportion approx. 3:1 also in a wide range of concentrations of Mn.


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