Scanning electron microscope with focus ion beam

High resolution scanning electron microscope (FESEM) combined with focus ion beam (FIB) FEI Quanta 3D FEG and extensive accessories (EDS, EBSD, GIS, etc.) is fully equipped workstation for 2D and 3D microscopy, nanomachining and MEMS prototyping.Advanced materials characterisation includes 3D crystallographic maps, 3D shape and distribution of particles, phases and inclusions at scales from nanometers to hundreds of microns. The FIB instrument allows, in general, flexible micromachining with extreme accuracy (~10nm if desired). At low beam current the FIB can also be used as an ion microscope with maximum resolution of 5nm. In conjunction with gas delivery systems (GIS) and nanomanipulator, the FIB enables MEMS prototyping and assembling, site-specific TEM foils preparation, AFM tip modification, etc.

Specifications:

Electron beam

• Schottky field emission cathode


• Resolution:
• High-vacuum: 0.8 nm at 30 kV (STEM), 1 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 1 kV(SE – without beam deceleration mode)
• Low-vacuum: 1.5 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 3 kV (SE)
• Extended low-vacuum mode (ESEM): 1.5 nm at 30 kV (SE)

• High-current ion column with Ga liquid-metal ion source
• Resolution 7 nm at 30 kV at beam coincident point (5 nm at optimal WD)
• Acceleration voltage: 2 – 30 kV
• Probe current: 1 pA – 65 nA
• Charge neutralization mode for milling of non-conductive samples