Scanning electron microscope with focus ion beam
High resolution scanning electron microscope (FESEM) combined with focus ion beam
(FIB) FEI Quanta 3D FEG and extensive accessories (EDS, EBSD, GIS, etc.) is fully
equipped workstation for 2D and 3D microscopy, nanomachining and MEMS
prototyping. Advanced materials characterisation includes 3D crystallographic maps,
3D shape and distribution of particles, phases and inclusions at scales from nanometers to
hundreds of microns. The FIB instrument allows, in general, flexible micromachining
with extreme accuracy (~10 nm if desired). At low beam current the FIB can also be used
as an ion microscope with maximum resolution of 5 nm. In conjunction with gas delivery
systems (GIS) and nanomanipulator, the FIB enables MEMS prototyping and assembling,
site-specific TEM foils preparation, AFM tip modification, etc.
Specifications:
Electron beam
Schottky field emission cathode
Resolution:
High-vacuum: 0.8 nm at 30 kV (STEM), 1 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE),
2.9 nm at 1 kV(SE – without beam deceleration mode)
Low-vacuum: 1.5 nm at 30 kV (SE), 2.5 nm at 30 kV (BSE), 2.9 nm at 3 kV (SE)
Extended low-vacuum mode (ESEM): 1.5 nm at 30 kV (SE)
Ion beam
High-current ion column with Ga liquid-metal ion source
Resolution: 7 nm at 30 kV at beam coincident point (5 nm at optimal WD)
Acceleration voltage: 2 – 30 kV
Probe current: 1 pA – 65 nA
Charge neutralization mode for milling of non-conductive samples
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