| Vedoucí: | RNDr. Vladimír Kuzmiak, CSc. | |
| Sekce: | Sekce materiálů | |
| Vlastní stránky: | http://www.ufe.cz/dpt320/ | |
The main focus is the characterization study of materials and structures destined for use in optoelectronics and microelectronics. Major attention has been paid to III-V materials, binaries GaP, InP, GaAs and GaSb, ternaries InGaP, AlGaAs and quaternary InGaAsP but some other materials like semiconductors Si, CdTe, CdZnTe or chalcogen glasses have been also investigated.
Main problems studied are:
(i) ionization processes of sputtered particles during ion bombardment
of semiconductor surfaces,
(ii) deep level impurities and point defects introduced into
semiconductors in a growing process, by degradation or by ion
bombardment,
(iii) radiative and non-radiative processes in semiconductors,
(iv) charge transport effects in semiconductors,
(v) calculation of photonic band structures of 1D and 2D crystals.