Department of Image Processing

Study of InAs quantum dots in GaAs/AlGaAs heterostructure by ballistic electron emission microscopy/spectroscopy

Conference Paper (international conference)

Vaniš Jan, Zelinka Jiří, Malina Václav, Henini M., Šroubek Filip, Walachová Jarmila

serial: Technical Digest. QDOS 2007 - Quantum Dot Optoelectronics Symposium , Eds: Ellinas Georgios, Iezekiel Stavros

action: QDOS 2007 - Quantum Dot Optoelectronics Symposium, (Limassol, CY, 14.11.2007-16.11.2007)

research: CEZ:AV0Z20670512

research: CEZ:AV0Z10750506

project(s): GA202/05/0242GA ČR

keywords: quantum dots, ballistic transport, semiconductor heterojunctions

abstract (eng):

Self assembled InAs quantum dots in GaAs/GaAlAs structures were examined by ballistic electron emission icroscopy/spectroscopy. The studied structures were grown by metal beam epitaxy. Quantum dots with an image of elliptical shape were studied. Ballistic current-voltage characteristics through the quantum dot and outside the quantum dot are studied. Examples of ballistic characteristics and their derivatives in the quantum dot resonant level region are given.

abstract (cze):

Pomocí balistické elektronové emisní mikroskopie/spektroskopie byly studovány samouspořádané InAs kvantové tečky v GaAs/GaAlAs heterostruktuře. Měřené struktury byly narosteny metodou molekulární svazkovou epitaxií. Byly studovány tečky s eliptickým obrazem. Jsou uvedeny příklady spektroskopických chrakteristik na a mimo kvantovou tečku. Dále jsou uvedeny příklady spektroskopických charakteristik s jejich derivacemi v oblasti hladin v kvantové tečce.

RIV: BM