Thin Layer Magnetron Sputtering

Thin layers are prepared by magnetron sputtering by using the commercially available LEYBOLD-HERAEUS Z 550 sputtering device. This device enables one to produce smaller batches or single pieces with maximum diameter of 100 mm and thickness less then 20 mm. It is equipped with three magnetrons with targets of 152 mm in diameter (the typical target thickness is 6 mm) which enables the deposition of three different materials without interrupting the vacuum. To meet special demands it is possible to apply some voltage to the substrate (bias sputtering, plasma etching) or to heat the substrate by using an infra-red radiator. Any materials which can be shaped as a disc of 152 mm in diameter and 1 – 6 mm thick can be deposited. The thickness of the deposited layers ranges from the unit of nanometers to the unit of micrometers, only for materials having a very low speed of sputtering, e.g. oxides, the upper limit lies in the region of hundreds of nanometers.

The following targets are available at our laboratory: Al, Si, Mo, Ti, Ni, Ag, C, ITO, Nb, Zr, W, Y₂O₃, Al₂O₃, SiO₂, TiO₂. and we are able to prepare the following layers: Al, Al₂O₃, AlN, Si, SiO₂, Si₃N₄, Mo, Ni, NiN_x, TiO₂, Ti, Ti₃N₄, TiN_x, Ag, Nb, NbN, Zr, ZrN, W, ITO (90%In + 10%Sn), C, C:N, Y₂O₃.

Also multilayers composed of the above mentioned materials can be deposited. We deposit X-ray molybdenum/silicon multilayer system [1], which can be used in the range from about 12 – 30 nm.

We use an impact test [2] to evaluate the impact resistance of hard coatings. The impact test offers an important new method for determination of the fracture toughness of hard thin films.