PROJECT DETAILS
| Name: |
|
Epitaxial overgrowth on/in porous A3B5 semiconductors |
| From: |
|
2006-01-01 |
|
| To: |
|
2007-12-31 |
In the scope of the nanotechnologies development the epitaxial growth on /in
porous substrates A3B5,(InP, GaAs and GaP) will be investigated. Micro and
nanopores layers could improve the structural perfection of the highly
mismatched heterojunction when mode of the lateral overgrowth is realized.
Three particular applications of the porous layers will be studied. At first
lateral overgrowth methode, secondly deposition of the heterojunction
material into the pores area and micro/nanopores layers for the active
structure separation from the substrate in case of multiple deposition of
the struucture on the same substrate. Electrochemical technology of the
micro/nano pores production in A3B5 semiconductors is a research subject in
our laboratory for more than three years and epitaxial deposition of the
A3B5 semiconductors from the vapor and liquid phase for optoelectronic
devices has been investigated for nearly four decades. Research of the
defects structure by electron microscopy , microcathodoluminescence and wet
etching will be combined with low temperature PL and transport properties
research.
