PROJECT DETAILS
Name: |
|
Utilization of specific properties of rare earths in preparation of InP based radiation detector structures |
Co-principal investigator: |
|
Ladislav Pekárek, MSc. |
From: |
|
2006-01-01 |
|
To: |
|
2008-12-31 |
The aim of the project proposal is the utilization of InP epitaxial layers
prepared with the addition of rare earths into the growth melt for the
detection of ionizing radiation. This novel approach, in the context of
radiation detection, enables to prepare pure, undoped p-type InP layers and
generates knowledge relevant for both the basic research and applications.
Two types of detector structures will be prepared and investigated: A)
Structures for X- and γ- ray detection, based on bulk semi-insulating (SI)
InP material with a thin p-type InP contact layer. SI-InP bulk crystals will
be prepared by Czochralski method with various dopants and regimes of
temperature annealing and the contact p-InP layer will be grown by liquid
phase epitaxial (LPE) growth. B) Structures on the base of p-type InP for α-
particle and soft X- ray detection. P-type InP layers with thickness
exceeding 10 μm and impurity concentrations below 10
15
cm
-3 will be prepared by LPE on n-type InP Czochralski grown
substrate. Suitable metal contacts will be formed by vacuum evaporation for
both types of structures. Prepared materials and structures will be
investigated by the following diagnostic methods: SEM – structure, low
temperature photoluminescence spectroscopy – optical properties, temperature
dependent Hall effect, DLTS, C-V measurement by Hg probe – electrical
properties and detection spectra of α- particles, X- and γ- rays from
241Am and other radioactive sources by multi-channel analyser –
detection properties.