In the field of complex oxide scintillators the tungstates and doped aluminum perovskites (REAlO3), garnets (RE3Al5O12) and orthosilicates (RE2SiO5) are systematically studied in the form of single crystals, optical ceramics or thin films prepared by the liquid phase epitaxy (LPE), Fig. 1. We focus on the point defects which give rise to trapping levels in the material forbidden gap. Understanding the nature and role of such defects in the scintillation mechanism and their relation to the manufacturing technology enables further optimization of these materials. The full text >>