Přednášející: Wolfgang Braun
Místo: Cukrovarnicka
Pořadatelé: Oddělení optických materiálů
In situ synchtrotron x-ray diffraction analysis of molecular beam epitaxy growth
Wolfgang Braun
Paul-Drude-Institut for Solid State Electronics, Berlin, Germany
www.pdi-berlin.de
The relentless efforts to obtain smaller and faster devices in microelectronics pose ever increasing demands on materials science. In particular, more and more dissimilar materials need to be combined for new device functionalities. These devices shrink in size, approaching length scales of even the smallest grain sizes in polycrystalline materials. The formation of interfaces and the mutual orientation of crystalline materials on both sides (epitaxy) therefore become very important parameters in the materials science of functional materials. The Paul-Drude Institute operates its own beamline at the synchrotron BESSY II in Berlin. This beamline combines an x-ray beamline with an energy range from 6 to 12 keV with a combined molecular beam epitaxy / surface diffractometer to study the formation of interfaces during their formation. I will review a variety of experiments we have done on this beamline as well as ongoing projects, including Fe3Si on GaAs, rare earth oxides on Si and epitaxial Sb-Ge-Te phase change materials.
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