PROJECT DETAILS
| Name: |
|
A quantitative analysis of rare earth elements in InP by using the SIMS technique |
| From: |
|
2006-02-01 |
|
| To: |
|
2006-12-31 |
The goal of the project is to increase the sensitivity and accuracy of the
chemical analysis of InP structures, which were doped by rare earth elements
during the process of their synthesis. This improvement can be achieved by
employing the the secondary ion mass spectrometry (SIMS)technique, which was
not used so far for that purpose in the Czech Republic because of the
unavailability of the method. That situation has changed substantially after
the installation of a quadrupole SIMS at UJEP in Usti nad Labem. The
detection limit of the SIMS technique is of the order of 1 ppm and is
element dependent. The improvement in the accuracy of the chemical analysis
of low-concentration impurities in InP can be achieved by using proper
calibration standards. By the use of SIMS three-dimensional depth profiles
can be measured, which would provide important information about the
chemical homogeneity of the InP structures. These sensitive SIMS
measurements will serve as an important feedback for the optimization of the
technology for the construction of new InP-based detectors.
