Fyzikální ústav Akademie věd ČR

Today, an important challenge in the field of spin based electronic devices is to manipulate the magnetization of a ferromagnetic layer without applying an external magnetic field in order to reduce energy consumption. Recently, a renewed attention has been paid to the magneto-electric effect, i.e. coupling between magnetization and electric polarization, in magnetic ferroelectric or multiferroic materials. A new concept of writing magnetic memories using multiferroic materials could be an interesting alternative to spin-transfer torque.