DEPARTMENT DETAILS
Department of Diagnostics

Chairman: Vladimír Kuzmiak, Ph.D.
Division: Division of Materials
Further details: http://www.ufe.cz/dpt320/

The main focus is the characterization study of materials and structures destined for use in optoelectronics and microelectronics. Major attention has been paid to III-V materials, binaries GaP, InP, GaAs and GaSb, ternaries InGaP, AlGaAs and quaternary InGaAsP but some other materials like semiconductors Si, CdTe, CdZnTe or chalcogen glasses have been also investigated.

Main problems studied are:

(i) ionization processes of sputtered particles during ion bombardment of semiconductor surfaces,
(ii) deep level impurities and point defects introduced into semiconductors in a growing process, by degradation or by ion bombardment,
(iii) radiative and non-radiative processes in semiconductors,
(iv) charge transport effects in semiconductors,
(v) calculation of photonic band structures of 1D and 2D crystals.

MEMBERS
Ondřej Černohorský
Sergey Eyderman, Ph.D.
Miloslav Frühauf
Prof. Petar Gladkov, Ph.D.
Pavel Kacerovský, Ph.D.
František Kostka, Ph.D.
Vojtěch Kříž
Jan Lorinčík, Ph.D.
Eva Novotná, MSc.
Robert Starý
Filip Šroubek, Ph.D.
Zdeněk Šroubek, DSc.
Jan Vaniš, Ph.D.
Jarmila Walachová, Ph.D.
Roman Yatskiv, Ph.D.
Jiří Zavadil, Ph.D.
Radek Zeipl, Ph.D.
Jiří Zelinka, MSc.
Karel Žďánský, Ph.D.