Head:
Research in optoelectronics is focused on experimental characterization, theoretical modeling and preparation of advanced materials for optoelectronics, namely semiconductors, special glasses, and optically non-linear crystals. Institute has an in-house facilities to produce bulks and thick epitaxial layers of selected III-V and II-VII semiconductor materials as well as to grow non-linear optical crystals. In the field of characterization, the main research activities include theoretical and experimental studies of low-temperature photo- and electro- luminescence, electrical and transport properties of layers and structures based on compound semiconductors. Ballistic electron emission microscopy and spectroscopy has been developed and benefits analysis of semiconductor nanostructures. Basic dynamical and charge transfer processes during ion and electron emission from solids are investigated in the laboratory of Secondary Ion Mass Spectroscopy (SIMS). The concepts developed within the solid state physics, such as a band theory, are being employed in the theoretical investigation of photonic band-gap materials.
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