Fyzikální ústav Akademie věd ČR

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Antiferromagnetic semiconductors I-Mn-V: new family of materials for spintronics

Seminar Wednesday, 11/05/2011 15:00 - 17:00

Speakers: Jan Mašek (Institute of Physics, ASCR)
Place: Lecture Hall FZÚ, Cukrovarnická 10, Prague 6
Presented in Czech
Organisers: Institute of Physics

[1] J. Mašek, J. Kudrnovský, F. Máca, B. L. Gallagher, D. H. Gregory, T. Jungwirth, Dilute moment n-type ferromagnetic semiconductor Li(Zn,Mn)As, Phys. Rev. Lett. 98, 067202 (2007).

[2] T. Jungwirth, V. Novák, X. Martí, M. Cukr, F. Máca, A. B. Shick, J. Mašek, P. Horodyská, P. Němec, V. Holý, J. Zemek, P. Kužel, I. Němec, B. L. Gallagher, R. P. Campion, C. T. Foxon, J. Wunderlich, Demonstration of molecular beam epitaxy and a semiconductor band structure for I-Mn-V compounds, Phys. Rev. B 83, 035321 (2011).

[3] F. Máca, J. Mašek, O. Stelmakhovych, X. Marti, K. Uhlířová, P. Beran, H. Reichlová, P. Wadley, V. Novák, T. Jungwirth, CuMn-V compounds: a transition from semimetal low-temperature to semiconductor high-temperature antiferromagnets, arXiv:1102.537 .

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