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DFT calculations of electronic and magnetic structure of CuMnAs and other I-Mn-V compounds

Seminar Tuesday, 25/06/2013 15:00 - 16:00

Speakers: Jakub Železný (Department of Spintronics and Nanoeletronics, FZÚ AV ČR, v.v.i. and Faculty of Mathematics and Physics, Charles University in Prague)
Place: Na Slovance, main lecture hall
Presented in English
Organisers: Department of Condensed Matter Theory

Abstract: Semiconductor spintronics traditionally utilizes ferromagnetic semiconductors. Such semiconductors are, however, rare and have low Curie temperatures. Recent observation of a large magnetoresistance in an antiferromagnet (AFM) based tunnel junction opens the prospect for utilizing AFM semiconductors instead. Promising candidates are antiferromagnetic I-Mn-V compounds. Two such compounds, LiMnAs and CuMnAs, were recently synthetized by MBE. LiMnAs is a room-temperature antiferromagnetic semiconductor, but it is problematic due to the reactive nature of Li. CuMnAs does not suffer from such issues and it is also a room-temperature antifferomagnet, but it is a semimetal. Little is know experimentally about most of the other I-Mn-V compounds. We performed a series of DFT calculations, concentrating mostly on various CuMn-V compounds, to understand their electronic and magnetic properties.

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