Speakers: Prof. Dr. R. J. Soukup, Prof. Dr. N. J. Ianno (Department of Electrical Engineering University of Nebraska-Lincoln, USA)
Place: Seminar room 117, Institute of Physics ASCR, Pod vodárenskou věží 1, Prague 8
Presented in English
Organisers:
Department of Low-Temperature Plasma
Prof. Dr. R. J. Soukup
Department of Electrical Engineering University of Nebraska-Lincoln, USA
Highly Ordered Growth of SiC Deposited using A Hollow Cathode Technique
Prof. Dr. N. J. Ianno
Department of Electrical Engineering University of Nebraska-Lincoln, USA
Solar Energy Engineering
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