Speakers: Prof. Hamid Oughaddou (Institut des Sciences Moléculaires d'Orsay, Université Paris-Sud, France; Département de Physique, Université de Cergy-Pontoise, France)
Place: Library lecture room, building A - 1st floor, Cukrovarnicka 10, Institute of Physics ASCR, Prague 6
Presented in English
Organisers:
Department of Thin Films and Nanostructures
Silicene resembles graphene in many respects: It is practically a twodimensional material, ordered in a honeycomb lattice and presents a Dirac cone band structure at the vicinity of the Fermi energy.
Electronically the main difference between carbon and silicon is stronger preference of sp3 over sp2 in silicon. This explains the buckling in silicene, and it leads to an expectation that silicene cannot exist as a stand-alone material, unlike graphene.
Recently we have shown that silicene can be grown on silver crystals. The big challenge for scientists now is to grow silicene on insulating substrates which will allow learning more about its electrical properties and understanding how it can be integrated to make electronic devices. In my talk I will present the recent progress in silicene.
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