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Speakers: Jan Mašek and Jakub Železný (Institute of Physics ASCR)
Place: Institute of Physics ASCR, Cukrovarnická 10, Meeting Room, Building A
Presented in English
Organisers:
Department of Spintronics and Nanoelectronics
Manganese telluride in its stable NiAs structure is an antiferromagnetic semiconductor. It is characterized by Néel temperature of 363 K and indirect band gap of approximately 0.35 eV and it is a crossroads material between other Mn chalcogenides (AF insulators) and Mn pnictides (FM metals). The main reason for extensive studies of MnTe around 1980 was, however, that its metastable forms with zinc-blende and rock-salt structure represent the limiting cases of the semimagnetic semiconductors derived from II-VI and IV-VI compounds, respectively. An important feature of the electronic structure of all crystal structures of MnTe is the hybridization of spin-polarized Mn d-states with Te pstates. With respect to strong spin-orbit coupling at Te, MnTe now becomes interesting from the spintronic point of view. We review the old results obtained in the IoP and present the first calculations of the electronic structure of MnTe including the spin-orbit interaction.
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