|
III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications
Period: 2012-01-01 - 2013-12-31
|
|
Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors
Period: 2012-01-01 - 2013-11-30
|
|
Ballistic electron emission microscopy and spectroscopy of InAs quantum dots prepared by various techniques
Period: 2011 - 2013
|
|
Skutterudite superlattices for Thermoelectric applications
Period: 2010-01-01 - 2012-12-31
|
|
Research of metal nanoparticles which are electrophoretically deposited on semiconductor compounds III-V-N
Period: 2010-01-01 - 2012-12-31
|
|
Nanostructures of Controlled Size and Dimensions
Period: 2008-01-01 - 2010-12-31
|
|
Slow ion induced kinetic electron emission from metals and semiconductors
Period: 2010-01-01 - 2012-12-31
|
|
Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
Period: 2010-01-01 - 2010-12-31
|
|
Metallic nanolayers for semiconductor sensor and detector structures
Period: 2009-01-01 - 2011-12-31
|
|
The role of transition metals and rare earth elements in the preparation of materials based on InP for radiation detectors
Period: 2009-01-01 - 2011-12-31
|
|
Investigation of Lead Iodide for X-ray Detection (bilateral project with DFG Germany)
Period: 2008-01-01 - 2010-12-31
|
|
Special glass materials for photonics applications
Period: 2008-01-01 - 2010-12-31
|
|
High dynamic range micro-Faraday array detector for multicollector isotopic SIMS
Period: 2007-01-01 - 2010-12-31
|
|
InP Epitaxial Layers Prepared from Rare-Earth Treated Melts: Growth, Characterization, and Application in Radiation Detectors
Period: 2008-01-01 - 2010-12-31
|
|
Periodic-dispersive photonic components for control of spectral, spatial and temporal characteristics of laser diode radiation - acronym “BRIGHTLIGHT”
Period: 2007-01-01 - 2009-12-31
|
|
Characterization of Low Defect Density Native Gallium Nitride Materials
Period: 2007-12-31 - 2009-12-31
|
|
Ternary skutterudites for thermoelectric applications: from bulks to thin films
Period: 2007-01-01 - 2009-12-31
|
|
Slow ion induced kinetic electron emission from metals
Period: 2007-01-01 - 2008-12-31
|
|
Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection
Period: 2006-01-01 - 2008-12-31
|
|
Utilization of specific properties of rare earths in preparation of InP based radiation detector structures
Period: 2006-01-01 - 2008-12-31
|
|
Special glasses and fibres for infrared applications
Period: 2005-01-01 - 2007-12-31
|
|
Epitaxial overgrowth on/in porous A3B5 semiconductors
Period: 2006-01-01 - 2007-12-31
|
|
Electron and ion emission from point contacts on solids
Period: 2004-01-01 - 2007-12-31
|
|
Space resolved ballistic electron emission spectroscopy on individual InAs/GaAs dots embedded in AlGaAs barriers
Period: 2005-01-01 - 2007-12-31
|
|
Study of the influence of impurities on electrical and optoelectrical properties of melt-grown PbI2 crystals
Period: 2004-01-01 - 2006-12-31
|
|
A quantitative analysis of rare earth elements in InP by using the SIMS technique
Period: 2006-02-01 - 2006-12-31
|
|
Preparation and characterization of self-organized porous structures in InGaP/GaAs heterostructures
Period: 2003-10-01 - 2005-12-31
|
|
Optical biopsy in the diagnosis of colorectal cancer
Period: 2003-01-02 - 2005-12-31
|
|
X-ray detectors based on InP
Period: 2003-04-01 - 2005-12-31
|
|
The use of rare earth elements to improve the preparation of InP- and PbI2- based semiconductor materials for detection of ionizing radiation
Period: 2003-01-01 - 2005-12-31
|
|
Pyroelectric sensors for applications in ecology, chemistry, medicine and in warfare
Period: 2002-01-01 - 2005-12-31
|
|
Preparation of the radiation resistant solar cells from GaInP2/GaAs
Period: 2002-08-01 - 2004-12-31
|
|
Special glasses for optoelectronics
Period: 2002-01-01 - 2004-12-31
|
|
Advanced ferroelectric materials for optoelectronics on the basis of hybrid organic-anorganic compounds
Period: 2002-01-01 - 2004-12-31
|
|
Study of ultra-thin Bi2Te3 films prepared by laser ablation and their modification by scanning tunneling microscope
Period: 2002-01-01 - 2004-12-31
|
|
Electronic interactions between metal ions and solid surfaces
Period: 2001-07-01 - 2003-12-31
|
|
Advanced ion-beam based technologies-hard ceramic coating and ceramic ferroelectrics
Period: 1997-01-01 - 2002-12-31
|
|
Slow ion induced electron emission from fusion relevant materials
Period: 2001-01-01 - 2002-12-31
|
|
Ion and electron emissions from solids
Period: 1999-01-01 - 2001-12-31
|
|
Experimental and theoretical studies of electronics excitations in solids during atomic scattering and sputtering
Period: 1997-06-01 - 2001-12-31
|
|
Transition element doped indium phosphide semiinsulating single crystals
Period: 1999-01-01 - 2001-12-31
|
|
Electron and ion emission from tokamak-first-wall materials induced by impact of atomic particles
Period: 2001-01-01 - 2001-12-31
|
|
Surface migration and reconstruction in the konetics of A3B5 layer growth and a new model for the calculation of the point defects concentration
Period: 1999-01-01 - 2001-12-31
|
|
Effect of rare-earth elements on preparation and properties of semiconductor AIIIBV materials
Period: 1999-01-01 - 2001-12-31
|
|
Preparation and characterization of epitaxial semiconductor MOVPE layers and structure based on GaSb
Period: 1998-09-01 - 2001-08-31
|
|
Multiply charged ion formation and electronic effects in low-energy sputtering of ionic compounds
Period: 1999-01-01 - 2000-12-31
|
|
Slow ion induced electron emission and surface modification for insulators
Period: 1999-01-01 - 2000-12-31
|
|
Study of perspective semiconductor materials and structures by ballistic electron emission microscopy/spectroscopy and contact profilometer
Period: 1997-01-01 - 1999-12-31
|
|
Cooperation in Science and Technology with Central and Eastern European Countries and with New Independent States
Period: 1997-01-01 - 1999-12-31
|
|
Characterization of superlattices and ultra-shallow layers in semiconductors by stanning tunneling microscope and contact profilometer
Period: 1994-01-01 - 1996-12-31
|
