Roman Yatskiv, Ph.D.

Research interests:

Electrophoretic deposition (EPD).
Scanning electron microscopy (SEM) and focused ion beam microscopy (FIB).
Electrical characterization of semiconductor materials (C–V, I–V, DLTS, Hall effect, Admittance spectroscopy). Optical characterization of semiconductor materials (Vis–UV spectroscopy, Raman spectroscopy).
Preparation and characterization of radiation detectors.

Education:

2007: Ph.D.: Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Microelectronics. Specialization: Electronics.

2002: Mgr.: Yuriy Fedkovych Chernivtsi National University, Faculty of Physics, Department of Electronics and Power Engineering.

Current research projects:

• Electrophoretic deposition through a time-varying electric field for research into new physical properties of nanostructured materials

Selected past projects:

Principal investigator of the projects:

• Research of metal nanoparticles which are electrophoretically deposited on semiconductor compounds III-V-N
• The role of transition metals and rare earth elements in the preparation of materials based on InP for radiation detectors

Member of projects:

• III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications
• Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors
• Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
• Nanostructures of Controlled Size and Dimensions
• Metallic nanolayers for semiconductor sensor and detector structures
• Special glass materials for photonics applications
• Investigation of Lead Iodide for X-ray Detection (bilateral project with DFG Germany)
• Ternary skutterudites for thermoelectric applications: from bulks to thin films
• Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection

Publications:

Journal papers:

1. R. Yatskiv, J. Grym, V. V. Brus, O. Cernohorsky, P. D. Maryanchuk, C Bazioti, G. P. Dimitrakopulos, Ph. Komninou: Transport properties of metal–semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles. Semicond. Sci. Technol. 2014; 29: 045017.
2. L. Kosyachenko, R. Yatskiv, N.S. Yurtsenyuk, O.L. Maslyanchuk, J. Grym: Graphite/CdMnTe Schottky diodes and their electrical characteristics. Semicond. Sci. Technol. 2014 ; 29: 015006
3. R. Yatskiv, J. Grym: Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes. Semicond. Sci. Technol. 2013; 28: 055009
4. J. Grym, R. Yatskiv: Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers. Semicond. Sci. Technol. 2013:28:045006
5. R. Yatskiv, K. Zdansky, J. Grym: Hydrogen Detection with Semimetal Graphite-ZnO (InP,GaN) Schottky Diodes, Key Engineering Materials 2013; 550:159-163.
6. R. Yatskiv, J. Grym: Hydrogen sensing using reduced graphene oxide sheets supported by Pd nanoparticles ,J. Phys.: Conf. Ser. 2013; 450: 012020.
7. R. Yatskiv, J. Grym: Temperature-dependent properties of semimetal graphite-ZnO schottky diodes, Appl. Phys. Lett. 2012;101(16):162106.
8. R. Yatskiv, J. Grym: Particle detectors based on InP Schottky diodes, Journal of Instrumentation 2012;7:C10005.
9. R. Yatskiv, J. Grym, K. Zdansky, K. Piksova:Semimetal graphite/ZnO Schottky diodes and their use for hydrogen sensing, Carbon 2012; 50(10):3928–3933.
10. K. Zdansky, R. Yatskiv: Schottky bariers on InP and GaN made by deposition of colloidal graphite and Pd, Pt or bimetal Pd/Pt nanoparticles for H2-gasdetection, Sensors and Actuators B: Chemical 2012;169(1):104-109.
11. R. Yatskiv, J. Grym, K. Zdansky : Highly sensitive hydrogen sensors based on GaN, Physica Status Solidi (c) 2012; 9(7):1661-1663.
12. K. Zdansky, O. Cernohorsky, R. Yatskiv: Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles, Acta Physica Polonica A 2012; 122(3):572-575.
13. K. Zdansky, R. Yatskiv, O. Cernohorsky, K. Piksova: EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors, Key Engineering Materials 2012; 507:169-174.
14. R.Yatskiv, J. Grym, K. Zdansky:Particle detectors based on semiconducting InP epitaxial layers, Journal of Instrumentation 2011; 6: C01072.
15. J. Grym, O. Prochazkova, R.Yatskiv, K. Piksova:Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP, Nanoscale Research Letters 2011; 6:392.
16. R.Yatskiv, J. Grym, K. Zdansky, L. Pekarek: Room temperature particle detectors based on indium phosphide, Nuclear Inst. and Methods in Physics Research, A 2010; 612(2):334-337.
17. R. Zeipl, M. Jelínek, J. Navráti, T. Kocourek, R. Yatskiv, M. Josieková, S. Leshkov, K. Jurek, J. Walachowá: Influence of thickness on properties of YbxCo4Sb12 layers prepared by laser ablation, Journal of Optoelectronics and Advanced Materials 2010; 12(3):572-575.
18. R. Yatskiv, J. Voves: Analysis of the resonant tunneling diode with the stepped prebarrier,Journal of Physics: Conference Series 2009;193: 012007.
19. R. Yatskiv, K. Zdansky, L. Pekarek: Room-temperature particle detectors with guard rings based on semi-insulating InP co-doped with Ti and Zn, Nuclear Inst. and Methods in Physics Research, A 2009; 598(3):759-763.
20. O. Procházková, J. Grym, J. Zavadil, K. Žďánský, R. Yatskiv: Impact of Pr on the properties of InP based layers for radiation sources and detectors, Physica Status Solidi (c) 2009; 6(12):2801-2803.
21. V. Gorodynskyy,R. Yatskiv, K. Zdansky, and L. Pekarek:High Detection Performance of Particle Detectors Based on SI InP Doped With Ti and Zn, IEEE Transactions on Nuclear Science 2008; 55(5/2):2785-2788.
22. J. Zavadil, J. Pedlíková, K. Žďánský, R. Yatskiv, P. Kostka, D. Ležal: Preparation and characterization of telluride glasses,Journal of Non-Crystalline Solids 2008; 354:486-491.

Conference papers:

1. R. Yatskiv, J.Grym, O. Cernohorsky, C. Bazioti, G. P. Dimitrakopulos, Ph. Komninou:Detection of hydrogen at room temperature with graphite-Pt nanoparticles/Si Schottky diodes, Confeerence proceedings, 36th intern.conf. CAS, Sinaia (Romania), 2013; p. 23-26.
2. O. Cernohorsky, K. Zdansky, R. Yatskiv, J. Grym: Layers of metals nanoparticles on various semiconductors for hydrogen detection, Confeerence proceedings, 4th intern.conf. NANOCON , Brno (Czech Republic), 2012; p. 1-6.
3. R. Yatskiv, J. Grym, K. Zdansky, K. Piksova: High sensitivity graphite-Pd (Pt) nanoparticles-InP Schottky diode hydrogen sensor, Confeerence proceedings, 23th intern. conf. on indium phosphide and related materials, Berlin (Germany), 2011; p. 67-70.
4. K. Zdansky, M. Muler, O. Cernohorsky, R. Yatskiv, : Graphite Schottky Barriers on n-InP and n-GaN with Deposited Pd, Pt or Bimetallic Pd/Pt Nanoparticles for H2 Sensing, Confeerence proceedings, 3th intern.conf. NANOCON , Brno (Czech Republic), 2011: p.1-6.
5. K. Zdansky, R. Yatskiv: Study of Schottky Barriers Prepared by Deposition of Colloidal Graphite and Pt Nanoparticles on InP and GaN, Conference proceeding, 13th intern. conf. on transparent optical network. Stockholm (Sweden), 2011; p. 1-4.
6. K. Zdansky, R. Yatskiv, J. Grym, O. Cernohorsky, J. Zavadil, F. Kostka : Study of electrophoretic deposition of Pd metal nanoparticles on InP and GaN crystal semiconductors for H2 gas sensors. Confeerence proceedings, 2th intern.conf. NANOCON , Olomouc (Czech Republic), 2011: p.1-6.
7. R. Yatskiv, J. Grym, K. Zdansky, L.Pekarek, J. Zavadil: Growth of InP Crystals with rare-earth elements, Confeerence proceedings, 21th intern. conf. on indium phosphide and related materials, California(USA), 2009: p. 91-93.
8. R. Yatskiv, K. Zdansky, L.Pekarek, V. Gorodynsky: Semi-Insulating InP detector with Guard-ring electrode, Confeerence proceedings, 20th intern. conf. on indium phosphide and related materials, Versailles (France), 2008; p.1-4.