Fyzikální ústav Akademie věd ČR

Semináře

Nucleation and growth of twins during fracture of a fine grained magnesium alloy

Pondělí, 15.09.2014 10:00

Prof. Alok Singh (Structural Materials Center, National Institute for Materials Science Tsukuba, Japan)

Twinning is an important mode of deformation in magnesium and its alloys. Twins also play an important role in the fracture of the alloys, by stress concentration of dislocations on the twin boundaries of the common {10-12} type twins, or formation of {10-11}-{10-12} double twins. Dislocations also play important role in nucleation and growth of twins. Nucleation of twins and double twins, mainly {10-12} type, has been subject of a number of studies, experimental as well as computational. In this study, nucleation of {10-11} type twins has also been studied.

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Simulations of electron transport phenomena in single-molecule junctions

Úterý, 16.09.2014 10:00

Thomas Frederiksen (Donostia International Physics Center (DIPC), Donostia-San Sebastian, Spain; IKERBASQUE, Basque Foundation for Science, Bilbao, Spain)

Single-molecule devices are ideal test beds for studying a range of quantum transport phenomena, and new insights are obtained through critical comparison between experiments and theoretical models.

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Femtosecond laser-induced periodic surface structures

Pátek, 19.09.2014 15:00

Jörn Bonse (BAM Federal Institute for Materials Research and Testing, Unter den Eichen 87, D-12205 Berlin, Germany)

During the past few years significantly increasing research activities in the field of laser-induced periodic surface structures (LIPSS, ripples) have been reported since the generation of LIPSS in a single-step process provides a simple way of surface nanostructuring towards a control of optical, mechanical, or chemical surface properties.

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Diamond Field Effect Transistors with high-k gate insulator

Čtvrtek, 09.10.2014 10:00 - 11:00

Yasuo Koide (Network and Facilities Services Division; Wide Bandgap Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Japan)

Diamond has an attractive interest as one of next-generation power electronics materials. Since the sheet hole density in the hydrogenated-diamond surface was reported to be as high as 1E14 cm-2 which was one or two orders larger than other semiconductors. Therefore, we should use such the big advantage and then have to develop the high-k gate dielectric for diamond in order to control the high-density hole carrier.

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Minulé semináře
Nina Podoliak Theoretical modelling of ferromagnetic nanomaterials based on liquid crystals 04.06.2009 10:00
Jean-François Legrand Onset of the -relaxation in LiCl-6H2O by Brillouin scattering techniques 07.05.2009 10:00
Marina Tyunina Relaxor Ferroelectric Thin Films 05.05.2009 10:00
Paweł Perkowski The analysis of methods for elimination of high frequency dielectric losses in ITO cells 30.04.2009 10:00
Hiroko Yokota Polar state and critical behavior in quantum relaxor Li doped KTaO3 17.04.2009 09:00
Yoshiaki Uesu Peculiar physical properties of ferroelectric superlattice thin films 16.04.2009 15:00
Lubor Lejček Pozoruhodný svět topologických poruch 17.03.2009 10:00
Databáze minulých seminářů (1995-2009) 01.01.2008 00:03

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