Fyzikální ústav Akademie věd ČR

Semináře

Nucleation and growth of twins during fracture of a fine grained magnesium alloy

Pondělí, 15.09.2014 10:00

Prof. Alok Singh (Structural Materials Center, National Institute for Materials Science Tsukuba, Japan)

Twinning is an important mode of deformation in magnesium and its alloys. Twins also play an important role in the fracture of the alloys, by stress concentration of dislocations on the twin boundaries of the common {10-12} type twins, or formation of {10-11}-{10-12} double twins. Dislocations also play important role in nucleation and growth of twins. Nucleation of twins and double twins, mainly {10-12} type, has been subject of a number of studies, experimental as well as computational. In this study, nucleation of {10-11} type twins has also been studied.

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Simulations of electron transport phenomena in single-molecule junctions

Úterý, 16.09.2014 10:00

Thomas Frederiksen (Donostia International Physics Center (DIPC), Donostia-San Sebastian, Spain; IKERBASQUE, Basque Foundation for Science, Bilbao, Spain)

Single-molecule devices are ideal test beds for studying a range of quantum transport phenomena, and new insights are obtained through critical comparison between experiments and theoretical models.

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Femtosecond laser-induced periodic surface structures

Pátek, 19.09.2014 15:00

Jörn Bonse (BAM Federal Institute for Materials Research and Testing, Unter den Eichen 87, D-12205 Berlin, Germany)

During the past few years significantly increasing research activities in the field of laser-induced periodic surface structures (LIPSS, ripples) have been reported since the generation of LIPSS in a single-step process provides a simple way of surface nanostructuring towards a control of optical, mechanical, or chemical surface properties.

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Diamond Field Effect Transistors with high-k gate insulator

Čtvrtek, 09.10.2014 10:00 - 11:00

Yasuo Koide (Network and Facilities Services Division; Wide Bandgap Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Japan)

Diamond has an attractive interest as one of next-generation power electronics materials. Since the sheet hole density in the hydrogenated-diamond surface was reported to be as high as 1E14 cm-2 which was one or two orders larger than other semiconductors. Therefore, we should use such the big advantage and then have to develop the high-k gate dielectric for diamond in order to control the high-density hole carrier.

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Minulé semináře
Jiří Chudoba, Oldřich Kepka Zpracování dat experimentu ATLAS na farmě Goliáš 06.02.2014 14:00
Balazs Ujfalussy Quasiparticle spectrum of superconductor-normal metal heterojunctions 06.02.2014 10:00
Jan Mašek a Jakub Železný Electronic structure of MnTe: Restrospective and news 04.02.2014 15:00
Jindřich Kolorenč Kvantové Monte Carlo simulace elektronové struktury pevných látek 04.02.2014 10:00
Michal Malinský Baryon and lepton number violation in the Standard Model and beyond 29.01.2014 14:00
Egbert Zojer Using Quantum-Mechanical Modelling to Understand the Role of Interfaces in Organic Electronics 28.01.2014 10:00
Tomáš Laštovička Novinky z konference LCWS 2013 aneb aktuality o výstavbě urychlovače ILC v Japonsku 16.01.2014 14:00
Victor M. García-Suárez Thermoelectric properties of molecular junctions 14.01.2014 10:00
J. Kulveit Neklasická nukleační teorie 07.01.2014 13:00
Petr Vopěnka Úplná rehabilitace Newtonova a Leibnizova infinitezimálního počtu 17.12.2013 15:00
Nora Abdellaoui Design of plasmonic rare earth phosphor films by Pulsed Laser Deposition 17.12.2013 10:00
Nora Abdellaoui POZVÁNKA NA PŘEDNÁŠKU 17.12.2013 10:00
Martina Boháčová Metody detekce kosmického záření – fluorescenční a mikrovlnná 12.12.2013 14:00
Ruslan Temirov How much control over single molecules could one get with the junction of a scanning probe microscope? 10.12.2013 10:00
Laserové dny 2013 06.12.2013 09:30
A.J. Weymouth Tabletop AFM, and, an interesting observation when probing forces and currents 03.12.2013 10:00
Dr. Pawel Perkovski & Dr. Wiktor Piecek 1) Relaxation modes close to SmA* - SmCa* phase transitions 2) Optically addressed diffractive structures 03.12.2013 10:00
Peter Markoš Numerical Analysis of Anderson localization 29.11.2013 10:00
Viktor Holubec Theoretical description of non-equilibrium energy transformation processes on the level of molecular structures 26.11.2013 15:00
Jeongsu Lee Nodal ”ground states” and orbital textures in semiconductor quantum dots 26.11.2013 13:00
Alan Sneddon Manažerské výzvy a rizika během výstavby nejintenzivnějšího laseru světa 25.11.2013 11:30
Prof. Bernard Hehlen Peculiarity of the low frequency dynamics of ferroelectric relaxors 19.11.2013 10:00
Prof. Sean Li Self-assembly of CeO2 Nanocubes: New Approach for the Development of Resistive Random Access Memory Devices 15.11.2013 14:00
E. Mihóková, P. Novák Crystal field and magnetism with Wannier functions: rare-earth ions in garnets, manganites and cobaltates 14.11.2013 14:00
Jiří Chudoba Aktuální trendy ve zpracování dat - zpráva o konferencích CHEP 2013 a HEPIX 14.11.2013 14:00
Tadeusz Domański Superconducting fluctuations in the electron systems with real-space pairs 12.11.2013 15:00
Peter Moulton Ti:sapphire Lasers: Past, Present and Future 06.11.2013 15:00
Istvan Kezsmarki New optical phenomena in multiferroic materials 05.11.2013 15:00
Prof. Shigeki Tokita Development of high-power mid-infrared Er fiber lasers 04.11.2013 14:30
Prof. Junji Kawanaka Current status of TRAM laser and its application at ILE/Osaka 04.11.2013 14:00

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