Fyzikální ústav Akademie věd ČR

Seminars

Monday, 15.09.2014 10:00

Prof. Alok Singh (Structural Materials Center, National Institute for Materials Science Tsukuba, Japan)

Twinning is an important mode of deformation in magnesium and its alloys. Twins also play an important role in the fracture of the alloys, by stress concentration of dislocations on the twin boundaries of the common {10-12} type twins, or formation of {10-11}-{10-12} double twins. Dislocations also play important role in nucleation and growth of twins. Nucleation of twins and double twins, mainly {10-12} type, has been subject of a number of studies, experimental as well as computational. In this study, nucleation of {10-11} type twins has also been studied.

Tuesday, 16.09.2014 10:00

Thomas Frederiksen (Donostia International Physics Center (DIPC), Donostia-San Sebastian, Spain; IKERBASQUE, Basque Foundation for Science, Bilbao, Spain)

Single-molecule devices are ideal test beds for studying a range of quantum transport phenomena, and new insights are obtained through critical comparison between experiments and theoretical models.

Friday, 19.09.2014 15:00

Jörn Bonse (BAM Federal Institute for Materials Research and Testing, Unter den Eichen 87, D-12205 Berlin, Germany)

During the past few years significantly increasing research activities in the field of laser-induced periodic surface structures (LIPSS, ripples) have been reported since the generation of LIPSS in a single-step process provides a simple way of surface nanostructuring towards a control of optical, mechanical, or chemical surface properties.

Thursday, 09.10.2014 10:00 - 11:00

Yasuo Koide (Network and Facilities Services Division; Wide Bandgap Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Japan)

Diamond has an attractive interest as one of next-generation power electronics materials. Since the sheet hole density in the hydrogenated-diamond surface was reported to be as high as 1E14 cm-2 which was one or two orders larger than other semiconductors. Therefore, we should use such the big advantage and then have to develop the high-k gate dielectric for diamond in order to control the high-density hole carrier.

Past seminars

Wolfgang Braun In situ synchtrotron x-ray diffraction analysis of molecular beam epitaxy growth 30.10.2009 10:00
Vilgelmina Stepkova Second Quantization of Mixed States of Luminophore Molecule and Small metal particle 27.10.2009 10:00
Wojciech Kuczynski Behaviour of helical structure in some chiral smectic C* liquid crystals 15.10.2009 10:00
Martin Žonda Phase transitions in the three-dimensional Falicov-Kimball model 29.09.2009 15:00
Simonas Grecius Simultaneous permittivity and permeability measurements of multiferroics using coaxial line techniques 22.09.2009 10:00
Dr. Dieter van den Bleeken, Rutgers Univ. (USA) Counting multicenter BPS states in N=2 supergravity 14.09.2009 14:30
Ausrine Bartasyte Raman spectroscopy and X-ray diffraction studies of oxide thin films 23.07.2009 10:00
Samuel Margueron Raman spectroscopy of GaN quantum dots and GaN/sapphire circular pillars 21.07.2009 10:00
Nina Podoliak Theoretical modelling of ferromagnetic nanomaterials based on liquid crystals 04.06.2009 10:00
Jean-François Legrand Onset of the -relaxation in LiCl-6H2O by Brillouin scattering techniques 07.05.2009 10:00
Marina Tyunina Relaxor Ferroelectric Thin Films 05.05.2009 10:00
Paweł Perkowski The analysis of methods for elimination of high frequency dielectric losses in ITO cells 30.04.2009 10:00
Hiroko Yokota Polar state and critical behavior in quantum relaxor Li doped KTaO3 17.04.2009 09:00
Yoshiaki Uesu Peculiar physical properties of ferroelectric superlattice thin films 16.04.2009 15:00
Lubor Lejček Pozoruhodný svět topologických poruch 17.03.2009 10:00
Database of past seminars (1995-2009) 01.09.2008 00:03

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