Single-molecule devices are ideal test beds for studying a range of quantum transport phenomena, and new insights are obtained through critical comparison between experiments and theoretical models.
Diamond has an attractive interest as one of next-generation power electronics materials. Since the sheet hole density in the hydrogenated-diamond surface was reported to be as high as 1E14 cm-2 which was one or two orders larger than other semiconductors. Therefore, we should use such the big advantage and then have to develop the high-k gate dielectric for diamond in order to control the high-density hole carrier.
