Fyzikální ústav Akademie věd ČR

Události

Nucleation and growth of twins during fracture of a fine grained magnesium alloy

Seminář / Po, 15/09/2014 - 10:00

Prof. Alok Singh (Structural Materials Center, National Institute for Materials Science Tsukuba, Japan)

Twinning is an important mode of deformation in magnesium and its alloys. Twins also play an important role in the fracture of the alloys, by stress concentration of dislocations on the twin boundaries of the common {10-12} type twins, or formation of {10-11}-{10-12} double twins. Dislocations also play important role in nucleation and growth of twins. Nucleation of twins and double twins, mainly {10-12} type, has been subject of a number of studies, experimental as well as computational. In this study, nucleation of {10-11} type twins has also been studied.

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Simulations of electron transport phenomena in single-molecule junctions

Seminář / Út, 16/09/2014 - 10:00

Thomas Frederiksen (Donostia International Physics Center (DIPC), Donostia-San Sebastian, Spain; IKERBASQUE, Basque Foundation for Science, Bilbao, Spain)

Single-molecule devices are ideal test beds for studying a range of quantum transport phenomena, and new insights are obtained through critical comparison between experiments and theoretical models.

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Femtosecond laser-induced periodic surface structures

Seminář / Pá, 19/09/2014 - 15:00

Jörn Bonse (BAM Federal Institute for Materials Research and Testing, Unter den Eichen 87, D-12205 Berlin, Germany)

During the past few years significantly increasing research activities in the field of laser-induced periodic surface structures (LIPSS, ripples) have been reported since the generation of LIPSS in a single-step process provides a simple way of surface nanostructuring towards a control of optical, mechanical, or chemical surface properties.

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Diamond Field Effect Transistors with high-k gate insulator

Seminář / Čt, 09/10/2014 - 10:00 - 11:00

Yasuo Koide (Network and Facilities Services Division; Wide Bandgap Materials Group, Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Japan)

Diamond has an attractive interest as one of next-generation power electronics materials. Since the sheet hole density in the hydrogenated-diamond surface was reported to be as high as 1E14 cm-2 which was one or two orders larger than other semiconductors. Therefore, we should use such the big advantage and then have to develop the high-k gate dielectric for diamond in order to control the high-density hole carrier.

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International Workshop on Relaxor Ferroelectrics

Konference / Ne, 12/10/2014 - Čt, 16/10/2014

We are proud to host the first regular International Workshop on Relaxor Ferroelectrics in Stirin, Czech Republic, on 12–16 October 2014. The Workshop will will initiate a biannual worldwide discussion forum focused on the physics and applications of relaxor ferroelectrics, their structure, polar nanoregions, nanodomains, dielectric and piezoelectric properties, relation to structural and spin glasses, spectroscopic data etc.

For more information, please visit the Workshop website at http://palata.fzu.cz/iwrf14/.

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Minulé události

Seminář / Pá, 01/06/2012 - 13:30

 Studium násobných partonových srážek v experimentu ATLAS

Seminář / St, 30/05/2012 - 15:00

 Antiferomagnetické polovodiče I-Mn-V: epitaxní příprava a první experimenty

Seminář / Út, 29/05/2012 - 15:00

 Anderson impurity model in an external magnetic field

Seminář / Út, 29/05/2012 - 09:30

 Stavíme nejintenzivnější laser pro uživatelský výzkum na světě – buďte s námi v týmu!

Seminář / Út, 22/05/2012 - 15:00

 The electronic and magnetic structure of Mn doped semiconductors and semimetals

Seminář / Út, 22/05/2012 - 12:45

 Seminář o laserových a optických technologiích na VŠB – TU v Ostravě

Seminář / Pá, 18/05/2012 - 10:00

 "Flexoelectricity: What is it, and why does it matter"

Seminář / Čt, 17/05/2012 - 15:00

 JINR participation in ATLAS upgrade

Seminář / Út, 15/05/2012 - 15:00

 Dynamic elasticity of materials

Seminář / Út, 15/05/2012 - 14:30

 Theoretical Approaches to Time Domain Spectroscopies: Learning about Electrons, Lattice, Equilibria, and New States of Matter

Seminář / Po, 14/05/2012 - 15:00

 Growth of Silicene

Workshop / Po, 14/05/2012 - 09:00

 Mikroskopie materiálů

Seminář / Čt, 10/05/2012 - 14:00

 Continuous-Time Estimators in Hybridization-Expansion Continuous-Time Quantum Monte Carlo

Seminář / Čt, 10/05/2012 - 12:05

 Seminář o laserových a optických technologiích na ZČU v Plzni

Seminář / St, 09/05/2012 - 16:00

 Seminář o laserových a optických technologiích na Masarykově univerzitě

Seminář / St, 09/05/2012 - 09:30

 Electrical potentials of nanodiamonds with different surface terminations evaluated by Kelvin probe force microscopy

Seminář / Čt, 03/05/2012 - 10:00

 Charge carrier dynamics in polymer solar cell materials probed by time resolved terahertz spectroscopy

Workshop / Čt, 03/05/2012 - 09:00

 The 12th Ad-Hoc Workshop on Jana2006

Seminář / Pá, 27/04/2012 - 13:30

 Měření účinného průřezu produkce WW v experimentu ATLAS

Seminář / Čt, 26/04/2012 - 15:00

 Seminář o laserových a optických technologiích

Seminář / Čt, 26/04/2012 - 15:00

 Novel perturbation expansions in QCD and applications: a conformal mapping approach

Seminář / Čt, 26/04/2012 - 10:00

 Synthesis and Properties of La/BiMnO3 Multiferroics

Seminář / St, 25/04/2012 - 14:00

 Exotické technologie na ELI beamlines

Seminář / St, 25/04/2012 - 10:00

 Využití Thompsonova-Lampardova teorému při měření specifických odporů

Seminář / Út, 24/04/2012 - 15:00

 Vertex corrections to the electrical conductivity of the disordered Falicov-Kimball model

Seminář / Út, 24/04/2012 - 10:00

 Graphene on Ru(0001): A nanostructured surface

Seminář / Po, 23/04/2012 - 13:00

 Computer simulations of FEL-excited matter

Workshop / Po, 23/04/2012 - 08:00

 HEPiX Spring 2012 Workshop

Čt, 19/04/2012 - 15:00

 Resolving Amorphous Solids - The Atomic Structure of a 2D Glass

Seminář / St, 18/04/2012 - 10:00

 Spin polarization of Bloch states and Hall currents in zinc-blend semiconductors

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