Jan Vaniš, Ph.D.

Current research projects:

• Electrophoretic deposition through a time-varying electric field for research into new physical properties of nanostructured materials

Selected past projects:

Member of projects:

• III-V semiconductor heterostructures and nanostructures towards innovative electronic and photonic applications
• Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors
• Lattice mismatch compensation in heteroepitaxy on micro and nanoporous A3B5 semiconductors and deposition of metals and semiconductors into micropores
• Nanostructures of Controlled Size and Dimensions
• The role of transition metals and rare earth elements in the preparation of materials based on InP for radiation detectors
• Ternary skutterudites for thermoelectric applications: from bulks to thin films
• Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection
• Space resolved ballistic electron emission spectroscopy on individual InAs/GaAs dots embedded in AlGaAs barriers
• Study of ultra-thin Bi2Te3 films prepared by laser ablation and their modification by scanning tunneling microscope
• Study of perspective semiconductor materials and structures by ballistic electron emission microscopy/spectroscopy and contact profilometer
• Characterization of superlattices and ultra-shallow layers in semiconductors by stanning tunneling microscope and contact profilometer

Publications:

Journal papers:

1. J. Walachova, J. Zelinka, V. Malina, J. Vanis, F. Sroubek, J. Pangrac, K. Melichar, E. Hulicius: "Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs/AlGaAs heterostructure" Appl. Phys. Lett. 92, (2008) 012101.
2. J. Walachova, J. Zelinka, V. Malina, J. Vanis, F. Sroubek, J. Pangrac, K. Melichar, E. Hulicius: "Study of InAs quantum dots in AlGaAs/GaAs heterostructure by ballistic electron emission microscopy/spectroscopy" Appl. Phys. Lett. 91, (2007) 042110. 
3. J. Vanis, D.H.Chow, F. Sroubek, T.C. McGill, J. Walachova: "Characterization of InAs/AlSb tunneling double barier heterostructure by reverse ballistic electron emission microscope with InAs as base electrode", Phys. stat. sol.(c) 2, No.4, (2005) 1444. 
4. J. Vanis, D. H. Chow, J. Pangrac, F.Sroubek, T. C. McGill, J. Walachova: “Characterisation of InAs/AlSb tunneling double barrier heterostructure by ballistic electron emission microscope with InAs as base electrode“, Phys. stat. sol.(c) 0 No.3. (2003) 986. 
5. R. Zeipl, M. Pavelka, M. Jelinek, J. Chval, P. Lostak, K. Zdansky, J. Vanis, S. Karamazov, S. Vackova, J.Walachova: “Some proporties of very thin Bi2Te3 layers prepared by laser ablation“, Phys. stat. sol.(c) 0 No.3 (2003) 867. 
6. R. Czajka, J. Horak, P. Lostak, S. Karamazov, J. Vanis, J. Walachova: “Characterisation and Nanometer-scale Modifications of Bi2Te3 Surface via Atomic Force Microscopy”, J. Vac. Sci. Technol. B 18, 1194–1198.(2000). 
7. J. Walachova, J. Zelinka, J. Vanis, S. Karamazov, M. Cukr, P. Zich, D.H. Chow and T.C. McGill: "Testing of resonant tunneling double barrier heterostructures by BEEM/BEES", Czech J. Phys. 49 (1999) 883. 
8. J. Walachova, J. Zelinka, J. Vanis, D. H. Chow, J. N. Schulman, S. Karamazov, M. Cukr, P. Zich, J. Kral, and T. C. McGill: "Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy", Appl. Phys. Lett. 70 (1997) 3588.

Conference papers:

1. J. Vanis, J. Zelinka, V. Malina, M. Henini, F. Sroubek, J. Walachova: "Study of InAs quantum dots in GaAs/AlGaAs heterostructure by ballistic electron emission microscopy/spectroscopy", Technical Digest of Quantum Dot Optoelectronics Symposium 2007, edited by Dr. Georgios Ellinas, Dr. Stavros Iezekiel
2. R. Zeipl, S. Karamazov, M. Jelínek, P. Lostak, M. Pavelka, Sz. Winiarz, R. Czajka, J. Vanis, F. Sroubek, J. Zelinka, J. Walachova: “Very thin layers prepared by laser ablation from Bi2Te3 target“, Proceedings of 22nd International Conference on Thermoelectrics, 17-21 August, La Grande-Motte, France, 2003, p. 342-345. 
3. R. Zeipl, M. Pavelka, M. Jelínek, J. Vanis, F. Šroubek, J. Walachova: “Modifications of Bi2Te3 nanolayers”, NANO´03, edited by Pavel Sandera, FSI VUT v Brne, ISBN 80-214-2527-X, 209-212, (2003). 
4. J. Vanis, M. Henini, F. Sroubek, J. Walachova: “Preliminary ballistic electron emissin microscopy/spectroscopy characterization of InAs quantum dots in AlGaAs/GaAs heterostructure”, NANO´03, edited by Pavel Sandera, FSI VUT v Brne, ISBN 80-214-2527-X, 76-80, (2003). 
5. J. Vanis, R. Czajka, J. Horak, P. Lostak, S. Karamazov, J. Walachova : “Modification of Bi2Te3 and Sb2Te3 by STM and AFM“, „Proceedings of the fifth European workshop on thermoelectrics“, University of Pardubice, Ed. by P. Lostak, L. Koudelka and C. Drasar, Pardubice, September 1999, p. 138. 
6. R. Czajka, J. Horak, P. Lošťák, S. Karamazov, J. Vanis, J. Walachova: “Characterization and nanometer scale modification of Bi2Te3 surface via the Atomic Force Microscopy”, Preliminary proceeding of STM´99 editted by Y. Kuk, I. W. Lyo, D. Jeon, S.-I. Park, 19-23 July 1999, Seoul, Korea, page 99. 
7. S. Karamazov, J. Walachova, J.Zelinka, J. Vanis, M. Cukr, P. Zich: "Influence of impurity concentration on Au-nGaAs barriers hight measured by BEEM in air" in "Abstract of Contributed Papers", EPS 10 Trends in Physics, September 9-13, Sevilla 1996, p.37.