Speakers: Peter Markoš (Fakulta elektroniky a informatiky, Slovenská technická univerzita, Bratislava)
Place: Na Slovance, main lecture hall
Presented in English
Organisers:
Department of Condensed Matter Theory
Abstract: Disordered electron systems undergo a metal-insulator transition when either Fermi energy crosses the mobility edge or the strength of the disorder increases over a critical value. We obtain by simple numerical simulations fundamental transport and spectral properties of these systems in the critical regime of the metal-insulator transition and present a numerical verification of the single parameter scaling theory of Anderson localization. As an example, numerical data for the critical exponents in dimensions 2 < d <= 5 are presented. Numerical data are in variance with theoretical predictions. Reasons for this discrepancy will be discussed.
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