Record wavelength emitted from InAs/GaAs quantum dots (maximum at 1580 nm).
Data transfer in optical waveguides uses about 1300 and 1550 nm (windows
of silicon waveguides – minimal dispersion and attenuation). A simple InAs
quantum dot (QD) structure prepared in Stranski-Krastanow growth mode by
metalorganic vapour phase epitaxy technique (MOVPE) is usually emitting
around 1200 nm. In order to shift emission wavelength into desired range,
InAs QDs have to be prepared in more sophisticated structures (vertical
stacking of QDs, strain reduction with the use of covering or
pseudomorphic matrix layers).
Photoluminescence spectra of InAs/GaAs quantum dots covered with InGaAs
strain-reducing layer of different growth rate. Measurements were taken at room
temperature.
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