Fyzikální ústav Akademie věd ČR

News

Ferromagnetic-semiconductor devices: Researchers from the Institute of Physics ASCR contributed to a review of a prominent field of modern physics30.10.14

Over the past two decades, the research of ferromagnetic semiconductors, with (Ga,Mn)As as a prime example, has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented...

The whole text >>

Connecting the worlds of semiconductors and magnets: Researchers from the Institute of Physics ASCR realize an efficient spin-charge converter 21.08.14

Current information technologies are either charge-based or spin-based. Semiconductor microprocessors are prime examples among the large variety of charge-based devices. They utilize the possibility offered by semiconductors to easily electrically manipulate and detect their electronic charge...

The whole text >>

The FUNBIO project – studying materials on the boundary of life 19.05.14

Institute of Physics of the Academy of Sciences of the Czech Republic has begun implementation of the Centre of functional materials for bio-applications (FUNBIO). This project is supported within 11th call of the OPPK (Operational Programme Prague Competitiveness)...

The whole text >>

Physics helps economy: a new monograph on Econophysics from the Institute of Physics ASCR11.03.14

Importance and impact of methods and techniques developed for studying physical problems has outreached the realm of natural sciences. Methods of quantum physics and statistical mechanics find more and more applications in biology, economy, informatics, or sociology. Physics has become one of...

The whole text >>

Relativity shakes a magnet: Researchers from Institute of Physics ASCR demonstrate a new principle for magnetic recording04.03.14

Current technologies for writing, storing, and reading information are either charge-based or spin-based. Semiconductor flash or random access memories are prime examples among the large variety of charge-based devices. They utilize the possibility offered by semiconductors to easily...

The whole text >>

Magnetic inside but not on outside: Researchers from the Institute of Physics introduce antiferromagnetic memories03.02.14

In ferromagnetic materials, information can be stored in “zeros” and “ones” defined by the orientation of magnetic moments, which can be pictured as small compasses (see Fig. 1a). This technology is behind a range of memory applications from kilobyte magnetic stripe cards to terabyte computer...

The whole text >>

A new theory explaining the origin of hydrocarbon molecules in interstellar space22.01.14

Scientists from the Institute of Physics of the ASCR, together with colleagues from Spain and France presented in the journal Nature Communications new theory of the origin of polyaromatic hydrocarbon molecules in the universe. According to the new theory, these molecules are formed by...

The whole text >>

New approach to preparation of highly tunable microwave dielectrics21.10.13

Scientists from Institute of Physics ASCR contributed to development of a new approach to preparation of highly tunable microwave dielectrics exploring Srn+1TinO3n+1 with layered perovskite crystal structure. This material has in the form of 50 nm thin films...

The whole text >>

Nobel Prize in Physics 201310.10.13

This year’s Nobel Prize in Physics was awarded jointly to François Englert from Belgium and British physicist Peter Higgs for – as the official citation of the Royal Swedish Academy of Sciences reads – „the theoretical discovery of a mechanism that...

The whole text >>

Friction on the micro-scale depends on surface orientation25.09.13

We meet friction forces in our everyday life; energy loss or wear of materials due to friction are causes of large financial losses. A quest for better understanding friction, which may help reducing the energy demands of our society, therefore counts among the research priorities in material...

The whole text >>

Copyright © 2008-2014, Fyzikální ústav AV ČR, v. v. i.