Based on density functional calculations of electronic structure and magnetic ordering we proposed that LiMnAs and related I-Mn-V crystals are antiferromagnetic semiconductors with bandgap around 1 eV. The antiferromagnetic state of these compouns is not sensitive even to high level of doping and the estimated Neel temperature is well well above the room temperature. This, together with a remarkable calculated magnetic anisotropy, makes these materials attractive for spintronics applications. Subsequently, thin films of LiMnAs were successfully grown by molecular beam epitaxy in the Institute and are now extensively studied experimentally.
T. Jungwirth, V. Novák, X. Martí, M. Cukr, F. Máca, A. B. Shick, J. Mašek, P. Horodyská, P. Němec, V. Holý, J. Zemek, P. Kužel, I. Němec, B. L. Gallagher, R. P. Campion, C. T. Foxon, J. Wunderlich:
Demonstration of molecular beam epitaxy and a semiconducting band structure for I-Mn-V compounds,
Phys. Rev. B 83 (2011) 035321.
