Speakers: Xavier Marti (University of California, Berkeley, California, USA)
Place: seminar room no. 226 (2. floor), Fyzikální ústav Na Slovance
Presented in English
Organisers:
Department of Dielectrics
Magnetic semiconductors entwine two of the most successful concepts in both fundamental physics and industry where ferromagnetic materials have played an undismissable role. Only very recently, antiferromagnets have been proposed as alternative material systems [1,2]. Antiferromagnetic spintronics have been demonstrated by the fabrication of tunnel devices [3,4], atomic-size proof-of concepts [5], even devices without auxiliary ferromagnetic layers [6].
We will review the recent progress in the field, and detail on the control of the ohmic resistance of an antiferromagnetic semiconductor by manipulating the magnetic state of a contiguous ferromagnetic layer. We present an oxide-based fully epitaxial heterostructure, its structural characterization and the electrical measurements showing a direct link between state of the ferromagnetic layer and the ohmic resistance of the antiferromagnetic semiconductor.
[1] S. Shick et al., Phys. Rev. B 81, 212409 (2010)
[2] T. Jungwirth et al., Phys. Rev. B 83, 035321 (2011)
[3] B.G. Park et al., Nature Materials 10, 347–351 (2011)
[4] X. Marti et al., Phys. Rev. Lett. 108, 017201 (2012)
[5] S. Loth et al., Science 335, 6065 (2012)
[6] D. Petti et al., submitted
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