Recently observed properties of charged ferroelectric domain walls (CDWs) make these structures promising for application in future electronics. It was demonstrated experimentally that the quasi two-dimensional electron gas is present at head-to-head CDWs [1]. The CDWs are therefore good conductors that can be moved by an external electric field. As suggested by theory [2] and experiment [3] CDWs with very low spacing may cause the enhancement of piezoelectric and dielectric properties. However, the problem of controlled regular growth and formation of CDWs is not well understood.