We prepare InGaN/GaN multiple quantum well (MQW) structure by metal–organic vapor phase epitaxy (MOVPE) and characterize it by XRD, photoluminescence and radioluminescence measurements. We demonstrated its suitability for scintillator application by an unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft x-ray source in extended dynamical and time scales. Further improvements of the structure are suggested, but even the...