Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors

Sponsor: Ministry of Education, Youth and Sports of the Czech Republic

Primary investigator: Jan Grym, Ph.D.

Members: Ondřej Černohorský, MSc.; Jan Lorinčík, Ph.D.; Jan Mrázek, Ph.D.; Jan Vaniš, Ph.D.; Roman Yatskiv, Ph.D.

From: 2012-01-01

To: 2013-11-30


The project focuses on the deposition of metal nanoparticles onto surfaces of epitaxial layers of III-V semiconductors to prepare high-quality Schottky barriers and to investigate their potential application in the detection of hazardous gases. Advanced characterization techniques are employed to study the metal-semiconductor interface and to characterize the local interfacial structure.

 

 

 

 

 

 


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