Jiří Zavadil, Ph.D.

Research interests:

He has long experience in the calculation of electronic structure of solid surfaces and strongly localised defects in III-V semiconductors. Since 1993 he has been involved in the optical characterisation of semiconductor and glass materials and structures for optoelectronics, by means of electro and photoluminescence spectroscopy. In recent years he has been working both theoretically and experimentally in the research of electroluminescent spectra of InGaAsP/InP structures and diodes and in the modeling of their wave guiding properties. His major interest now is the study of luminescent properties of InP based semiconductors and chalcogenide glass materials doped with rare-earth elements and characterization of related structures and nanostructures.

Education:

1967: Graduated from Faculty of Mathematics and Physics, Charles University, Prague 

1972: RNDr in Theoretical Physics, Faculty of Mathematics and Physics, Charles University, Prague

1973: PhD in Physics, Institute of Physics, Czechoslovac Academy of Sciences, Prague

Current projects:

Member of projects:

• Electrophoretic deposition through a time-varying electric field for research into new physical properties of nanostructured materials

Selected past projects:

Principal investigator of the projects:

• Study of interfaces between metal nanoparticles and InP for gas sensing and radiations detection
• Optical biopsy in the diagnosis of colorectal cancer
• Special glasses for optoelectronics

Co-principal investigator of the projects:

• Special glasses on the base of heavy metal oxides
• Nanostructures of Controlled Size and Dimensions
• Special glass materials for photonics applications
• Investigation of Lead Iodide for X-ray Detection (bilateral project with DFG Germany)
• Special glasses and fibres for infrared applications
• Optical biopsy in the diagnosis of colorectal cancer

Member of the projects:

• Research of metal nanoparticles which are electrophoretically deposited on semiconductor compounds III-V-N
• Metallic nanolayers for semiconductor sensor and detector structures
• Periodic-dispersive photonic components for control of spectral, spatial and temporal characteristics of laser diode radiation - acronym “BRIGHTLIGHT”
• Characterization of Low Defect Density Native Gallium Nitride Materials
• Utilization of specific properties of rare earths in preparation of InP based radiation detector structures
• Study of the influence of impurities on electrical and optoelectrical properties of melt-grown PbI2 crystals
• The use of rare earth elements to improve the preparation of InP- and PbI2- based semiconductor materials for detection of ionizing radiation
• Advanced ferroelectric materials for optoelectronics on the basis of hybrid organic-anorganic compounds

Selected publications:

1. D. Ležal, J. Zavadil and M. Procházka: Sulfide, selenide and telluride glassy systems for optoelectronic applications, Journal of Optoelectronics and Advanced Materials 7 (5) (2005) 2281-2292.
2. K. Zdansky, J. Zavadil, L. Pekarek, V. Gorodynsklyy and H. Kozak: Investigation of copper doped InP single crystals grown by Czochralski technique for use in X-ray detection, phys. stat. sol (a) 202 (2005) 555-560. 
3. J. Zavadil, O. Procházková and P. Gladkov: Optical properties of InP layers prepared with the addition of Ce, Tm and Lu in the growth melt, Cryst. Res. Technol. 40 (2005) 498-502. 
4. L. Horák, J. Zavadil, V. Ducháč, S. Javorský, F. Kostka, A. Švec and D. Ležal: Autofluorescence spectroscopy of colorectal carcinoma-ex vivo study, Journal of Optoelectronics and Advanced Materials, 8(1) (2006) 396-400. 
5. J. Zavadil, O. Prochazkova, K. Zdansky and P. Gladkov: Ce and Yb doped InP layers grown for radiation detection, phys stat sol (c) 4 (2007) 1444-1447 
6. J. Pedlíková, J. Zavadil, O. Procházková and D. Ležal: Special glasses for IR applications, Journal of Optoelectronics and Advanced Materials 9 (2007) 1679-1682. 
7. K. Žďánský, P. Kacerovský, J. Zavadil, J. Lorinčík and A. Fojtík: Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles, Nanoscale Res. Letters 2 (2007) 450-454. 
8. J. Zavadil, O. Procházková, K. Žďánský, P. Gladkov: Ce and Yb doped InP layers grown for radiation detection, phys. stat. sol. (c) 4 (2007) 1444-1447. 
9. J. Zavadil, O. Procházková, K. Žďánský, P. Gladkov: InP p-type epitaxial layers grown with the addition of rare-earth elements for use in radiation detection, J. Optoelectronics & Advanced Mat. 9 (2007) 1221-1226. 
10. Kaluzny J, Pedlikova J, Zavadil J, et al.: Changes of sulphide glasses caused by the presence of As, Journal of Optoelectronics and Advanced Materials 9 (2007) 3076-3078. 
11. Kubliha M, Kaluzny J, Pedlikova J, et al: Electrical and dielectrical properties of As-Se-Teglasses, , Journal of Optoelectronics and Advanced Materials 9 (2007) 3082-3087. 
12. O. Procházková, J. Grym, L. Pekárek, J. Zavadil, K. Žďánský: InP based semiconductor structures for radiation detection, J. Mater Sci: Mater Electron 19 (2008) 770-775. 
13. O. Procházková, J. Grym, J. Zavadil, J. Lorinčík, K. Žďánský: Influence of Yb and Yb2O3 addition on the properties of InP layers, J. of Optoelectronics and Advanced Materials 10 (2008) 3261-3264. 
14. J. Zavadil, J. Pedlikova, K. Zdansky, R. Yatskiv, P. Kostka, D. Lezal: Preparation and characterization of telluride glasses, Journal of Non-Cryst. Solids 354 (2008) 486-491. 
15. M. Matuchova, K. Zdansky, J. Zavadil, A. Danilewsky, J. Maixner, D. Alexiew: Electrical, optical and structural properties of lead iodide, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 20 (2008) 289-294. 
16. M. Matuchova, K. Zdansky, J. Zavadil: Lead iodide crystals prepared under stochiometric and nonstochiometric conditions, Materials Science and Engineering B, 165, (2009) 60-63 
17. M. Matuchova, K. Zdansky, J. Zavadil., A. Danilewsky, F. Riesz., M.A.S. Hassan, D. Alexiev, R. Kral: Study of the influence of the rare-earth elements on the properties of lead jodide, J. of Crystal Growth 311 (2009) 3557-3562. 
18. J. Grym, O. Procházková, J. Zavadil, K. Žďánský: LPE growth of InP layers from rare-earth melts for radiation detector structures, Materials Science and Engineering B 165 (2009) 94-97. 
19. J. Zavadil, P. Kostka, J. Pedlíková, K. Žďánský, M. Kubliha, V. Labaš, J. Kalužný: Electro-optical characterization of Ge-Se-Te glasses, J Non-Cryst Solids 355 (2009) 2083-2087. 
20. J. Kalužný, J. Pedlíková, J. Zavadil, V. Labaš, M. Kubliha, P. Kostka: Electrical methods for optimization of structural changes and defects in sulphide glasses, J Optoelectronics & Adv. Materials 11 (2009) 2053-2057. 
21. J. Kalužný, J. Pedlíková, P. Kostka, V. Labaš, , M. Kubliha, J. Zavadil, S. Minarik: Investigation of electrical and dielectric properties of Ge20Se80-xTex glasses doped by Er, Ho, Pr, J Optoelectronics & Adv. Materials 11 (2009) 2063-2068. 
22. K. Žďánský, J. Zavadil, P. Kacerovský, F. Kostka, and A. Fojtík: Electrophoretic deposition of reverse micelle metal nanoparticles, phys. stat. sol. (c) 6, No. 12 (2009) 2722-2724. 
23. K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, J. Vanis, F. Kostka, O. Cernohorsky, A. Fojtik, J. Reboun, J. Cermak: Electrophoresis deposition of metal nanoparticles with reverse micelles onto InP, Int. J. Mat. Res. (formerly Z. Metallkd.) 100, No. 9 (2009) 1234-1238. 
24. M. Matuchova, K. Zdansky, J. Zavadil, J. Tonn, Mousa M. Jafar, A.N. Danilewsky, A. Croll, J. Maixner: Influence of non-stoichiometry on the quality of lead iodide for use in X-ray detection, Journal of Crystal Growth 312 (2010) 1233-1239. 
25. K. Zdansky, J. Zavadil, P. Kacerovsky, J. Lorincik, A. Fojtik: Deposition of Pd nanoparticles on InP by electrophoresis: dependence on electrode polarity, IEEE Transactions on Nanotechnology 9 (2010) 355-360.