Fyzikální ústav Akademie věd ČR

22. konferenci o počítání ve fyzice vysokých energií a nukleární fyzice předcházelo již tradiční pracovní setkání WLCC (Worlwide LHC Computing Grid), které se na rozdíl od konference CHEP2016 soustředí pouze na problematiku LHC experimentů. Na semináři představím výběr zajímavostí z obou akcí a ukážu nároky LHC experimentů pro zbytek Run 2, Run 3 i pro vzdálenější HL-LHC. To porovnám se situací v Tier-2 středisku v České republice a možnostmi jeho dalšího růstu.

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Topological properties of zincblende materials

Úterý, 08.11.2016 15:00 - 16:00

Tomáš Rauch (Institute of Physik, Martin Luther University, Halle-Wittenberg, Germany )

Abstract: Zincblende semiconductors are materials used in electronics since decades. In the last years, these compounds have been revisited and studied in the context of topological insulators and semimetals. For example, a two-dimensional CdTe/HgTe/CdTe quantum-well is a prototypical topological insulator studied intensively since 2005. Thouless, Haldane and Kosterlitz were awarded this years Nobel prize in physics for their fundamental work, which finally led to the current immense interest in these materials.

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2D systems in contact with spin degrees of freedom

Středa, 09.11.2016 15:00 - 17:00

Jan Honolka (Fyzikální ústav AV ČR, v. v. i.)

Spintronic properties of 2D systems and their potential when in contact with magnetic atoms are discussed for the examples of topological insulator (TI) and graphene systems [1-5].

The interface between ferromagnetic and non-magnetic Bi2Se3 phases is presented as a material platform to investigate the influence of time-reversal symmetry breaking and band bending effect of spin degrees of freedom on 3D TI properties. Their impact on 2D magnetotransport is shortly discussed.

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Advances in Silicon Heterojunction Solar Cell Research

Pátek, 11.11.2016 10:00 - 11:00

Stefaan de Wolf (King Abdullah University of Science and Technology, Solar Center, Thuwal, Saudi Arabia)

In this presentation we discuss recent developments in the field of silicon heterojunction solar cells. This technology is a prime example of so-called passivating contacts. Such contacts passivate the silicon surface states and collect one carrier type, while blocking the opposite type. Here, we specifically discuss three different strategies to improve the optical response of silicon heterojunction devices. First, doped amorphous silicon layers at the front can be replaced by highly transparent transition metal oxides for carrier collection.

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Minulé semináře


Jan Rusz	Inelastic electron scattering on magnetic materials – towards atomic resolution measurements of magnetism	01.11.2016 15:00
Jiří Klimeš	Towards an accurate theoretical description of extended systems	01.11.2016 10:00
Prof. Arie Zigler	Evolution of fast electrons generated during interaction of high intensity laser with structured targets	27.10.2016 10:00
Maciej M. Maska	The Kosterlitz-Thouless transition in the phase-fermion model	25.10.2016 15:00
Petr Slavíček	Chemistry and Physics Triggered by Light : Molecular Simulations in UV and X-ray domains	25.10.2016 10:00
Petr Slavíček	Chemistry and Physics Triggered by Light : Molecular Simulations in UV and X-ray domains	25.10.2016 10:00
Dr. Roman Pasechnik	Hadronic diffraction as a probe for long-distance effects in QCD	20.10.2016 14:00
Kamil Olejník	Fast electrical switching of multilevel antiferromagnetic memory	20.10.2016 12:00
Sebastian T. B. Goennenwein	Spin Current Experiments	20.10.2016 11:00
Esa Räsänen	Physics of artificial graphene	18.10.2016 14:00