Fyzikální ústav Akademie věd ČR

Seminars

Mon, 07/11/2016 - 14:00 - 15:00

Jiří Chudoba (Institute of Physics of ASCR)

Abstrakt:

22. konferenci o počítání ve fyzice vysokých energií a nukleární fyzice předcházelo již tradiční pracovní setkání WLCC (Worlwide LHC Computing Grid), které se na rozdíl od konference CHEP2016 soustředí pouze na problematiku LHC experimentů. Na semináři představím výběr zajímavostí z obou akcí a ukážu nároky LHC experimentů pro zbytek Run 2, Run 3 i pro vzdálenější HL-LHC. To porovnám se situací v Tier-2 středisku v České republice a možnostmi jeho dalšího růstu.

Tue, 08/11/2016 - 15:00 - 16:00

Tomáš Rauch (Institute of Physik, Martin Luther University, Halle-Wittenberg, Germany )

Abstract: Zincblende semiconductors are materials used in electronics since decades. In the last years, these compounds have been revisited and studied in the context of topological insulators and semimetals. For example, a two-dimensional CdTe/HgTe/CdTe quantum-well is a prototypical topological insulator studied intensively since 2005. Thouless, Haldane and Kosterlitz were awarded this years Nobel prize in physics for their fundamental work, which finally led to the current immense interest in these materials.

Wed, 09/11/2016 - 15:00 - 17:00

Jan Honolka (Institute of Physics CAS)

Spintronic properties of 2D systems and their potential when in contact with magnetic atoms are discussed for the examples of topological insulator (TI) and graphene systems [1-5].

The interface between ferromagnetic and non-magnetic Bi2Se3 phases is presented as a material platform to investigate the influence of time-reversal symmetry breaking and band bending effect of spin degrees of freedom on 3D TI properties. Their impact on 2D magnetotransport is shortly discussed.

Fri, 11/11/2016 - 10:00 - 11:00

Stefaan de Wolf (King Abdullah University of Science and Technology, Solar Center, Thuwal, Saudi Arabia)

In this presentation we discuss recent developments in the field of silicon heterojunction solar cells. This technology is a prime example of so-called passivating contacts. Such contacts passivate the silicon surface states and collect one carrier type, while blocking the opposite type. Here, we specifically discuss three different strategies to improve the optical response of silicon heterojunction devices. First, doped amorphous silicon layers at the front can be replaced by highly transparent transition metal oxides for carrier collection.

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