We participate in activities of the CERN RD50 collaboration “Radiation hard semiconductor devices for very high luminosity colliders”. We measure electrical characteristics of silicon strip sensors before and after gamma and proton irradiation using Karl Suss Pa200 semi-automatic probe station as well as manual probe station with cool chuck installed at the silicon laboratory of the IoP. The proton irradiated sensors must be tested cooled with cool nitrogen flow. The surface radiation damage is tested by changes in interstrip capacitance and resistance and in the effectiveness of punch-through protection structure. The parameters obtained by extensive electrical characterization of bulk and surface properties of unirradiated and irradiated silicon detectors provided by different vendors of ATLAS and CMS experiments will be used to develop a unique comprehensive radiation damage model.
