Fyzikální ústav Akademie věd ČR

Seminář Čtvrtek, 25.05.2017 10:00 - 12:00

Místo: přednáškový sál FZÚ, Pod Vodárenskou věží 1, Praha 8
Jazyk: anglicky
Pořadatelé: Oddělení materiálové analýzy

Program

STEM spectrum-imaging of semiconductor devices
Pavel Potapov
GLOBALFOUNDRIES,Centre for Complex Analysis,
Dresden, Germany

Implementation of modern STEM instruments with fast EELS and EDX spectrum-imaging facilities opens new prospects in materials analysis by electron microscopy. In the domain of swift compositional mapping, STEM spectrum-imaging shows the significant advantages over more traditional techniques like EFTEM. Furthermore, a variation of the Energy-Loss Near Edge Structure (ELNES) - that is related to changing bonds between given elements - can be mapped within a reasonably short time.

This presentation demonstrates the application of STEM spectrum-imaging for analysis of composition and bonding in modern CMOS devices. The pros and contras of using EELS or EDX spectroscopies are considered. The results of spectrum-imaging can be further denoised by post-acquisition treatment with Principal Component Analysis (PCA).

TEM characterization of nanomaterials
Mariana Klementová
Institute of Physics of the CAS

Transmission electron microscopy (TEM) is a very powerful set of methods for materials characterization at nanoscale. Several examples of nanomaterials characterization employing various techniques of TEM such as high-resolution TEM, electron diffraction, and electron dispersive X-ray spectroscopy will be presented. Last but not least, electron diffraction tomography as a tool for structure solution of nanocrystalline materials will be introduced.