Abstract: A- and B-site substitution of barium titanate with homovalent
or heterovalent dopants is at the basis of solid solutions that lately
found increasing importance for dielectric, piezoelectric, energy
storage and microwave applications. High dielectric permittivity—stable
over a large temperature range—and large high-field piezoelectric
coefficients are typically sought-for figures of merit. Yet,
compositional tuning to attain specific properties has been largely
based on macroscopic observations and very little is known about the
fine material structure on the short range that is necessary to induce
those properties. In relaxors, for instance, it is not yet clear whether
their peculiar behaviour originates from random electric fields or
simple dipolar interactions. Raman spectroscopy, being sensitive to the
material’s short range structure, is a very attractive technique to
study structure-property relationships in Ba-based ferroelectrics and
relaxors. In this presentation, an overview will be given on this
technique and on the information it can convey on these systems. It will
be shown that the Raman method is complementary to diffraction and
macroscopic property measurements, and can add decisive details to
understanding the whole picture, especially if coupled with atomistic
simulations. We will focus on both A- and B-site substituted BaTiO3
(with Bi and Zr, respectively) and also A- and B-site co-doped systems
(with Bi, Yb and Fe).