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Fundamental property of 6.X-nm EUV emission for the next generation lithography

Seminář
Pondělí, 16.07.2012 10:30

Přednášející: Takeshi Higashiguchi (Department of Advanced Interdisciplinary Sciences, and Center for Optical Research & Education (CORE) Utsunomiya University, Yoto 7-1-2, Utsunomiya, Tochigi 321-8585, Japan)
Místo: Přednáškový sál Fyzikálního ústavu v Cukrovarnické (Budova A, 1. patro)
Jazyk: anglicky
Pořadatelé: Centrum HiLASE

This presentation shows specific laser-produced plasma, for efficient beyond extreme ultraviolet (BEUV) source with peak emission around 6.X nm, which is attributed to hundreds of thousands of near-degenerate resonance lines in an unresolved transition array (UTA) from highly ionized ions. It is experimentally observed on the variation of the spectral behavior and the conversion efficiency in Gd and/or Tb plasmas, and the talk focuses on the fundamental property for the next generation lithography with efficient BEUV sources.

Presenting Author

Takeshi Higashiguchi is an associate professor in Utsunomiya University, Japan. He received his Ph.D. in engineering from Utsunomiya University. His research activities have focused on short-wavelength light sources, laser-plasma interaction, and plasma photonics devices.