MOVPE Technology

MOVPE Technological laboratory - Metal-Organic Vapour Phase Epitaxy

Technological laboratory MOVPE - growth of A^IIIB^V GaAs and GaSb based structures by epitaxy from organomellic compounds using AIXTRON 200 equipment. A^IIIB^V based layers and structures are prerpared using commercial equipment AIXTRON 200 equipped with RF heating in H₂ atmosphere purified by diffusion through Pd.
Organometallic compounds and hydrides of Al, Ga, In, As, Sb, respectively, are used as precursors: TMAl, TtBAl, TMGa, TEGa, TMIn, AsH₃, tBAsH₂, TDMASb, TESb. Z dopantů DETe, SiH₄, CCl₄, DEZn.

Examples of prepared materials:

1. GaAs/InAs/InGaAs - Quantum dots (QD), Quantum wells (QW), Multi-QW, Multi-QD, QW a QD lasers
2. GaAs/AlGaAs - planare waveguides, Quantum wells (QW), Multi-QW, delta doping Si
3. GaAs/InAlAs - QW, Multi-QW
4. GaSb, GaAsSb, InAsSb, InGaSb laers and struktures with QW, Multi-QW

Previous technological experience: A^IIIB^V LPE and low dislocation bulk crystal growth (GaSb, GaAs).

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