You are here

Home » Research

Selected results of department 14

Relativistic transformation of temperature and Mosengeil–Ott’s antinomy

A not satisfactorily solved problem of relativistic transformation of temperature plying the decisive role in relativistic thermal physics and cosmology is reopened. It is shown that the origin of the so called Mosengeil-Ott’s antinomy and other aligned paradoxes are related to the wrong understanding of the physical meaning of temperature and application of Planck’s Ansatz of Lorentz’s invariance of entropy. The whole text »

Record wavelength emitted from InAs/GaAs quantum dots

Record wavelength emitted from InAs/GaAs quantum dots (maximum at 1580 nm).

Data transfer in optical waveguides uses about 1300 and 1550 nm (windows of silicon waveguides – minimal dispersion and attenuation). A simple InAs quantum dot (QD) structure prepared in Stranski-Krastanow growth mode by metalorganic vapour phase epitaxy technique (MOVPE) is usually emitting around 1200 nm. In order to shift emission wavelength into desired range, InAs QDs have to be prepared in more sophisticated structures (vertical stacking of QDs, strain reduction with the use of covering or pseudomorphic matrix layers).

The whole text »

Screening and phase transitions in low-dimensional structures

We have proposed an original method of characterizing the electrostatic screening of electron gas by means of a highly sensitive capacitance bridge. Using this method, we measured, at low temperatures (1.2 K - 4 K), the dependence of the density of screening electron states in low-dimensional semiconductor structures on the magnetic field. The whole text »

Mechanism of superconductivity in boron-doped diamond

Boron-doped diamond is material promising for various applications in biology and electrochemistry showing remarkable transport properties, superconductivity including. Understanding of the mechanism of electron transport in this material is an interesting physical problem, the solution of which is important both in applications and as a guide for the study of other superconductors. The whole text »

Optimisation of InAs Quantum Dot Preparation

Quantum dots based on InAs/GaAs are perspective structures for active zones of lasers and optical amplifiers used for data transmission via optical fibre waveguides.

We prepare InAs/GaAs quantum dots using Stranski-Krastanow growth mode in MOVPE (Metal-Organic Vapour Phase Epitaxy) laboratory of Semiconductor department.

The whole text »